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用于潜在光电子应用的掺杂不同氧化物纳米颗粒的聚甲基丙烯酸甲酯/聚乙二醇聚合物纳米复合材料的对比研究。

A comparative study of PMMA/PEG polymer nanocomposites doped with different oxides nanoparticles for potential optoelectronic applications.

作者信息

Salam Omar Abdel, Hamad Hisham A, Eltokhy Mostafa A R, Ali Ahmed I, Son Jong Yeog, Ramzy Galal H

机构信息

Electronic Technology Department, Faculty of Technology and Education, Helwan University, Saray-El Qoupa, El Sawah Street, Cairo, 11281, Egypt.

Basic Science Department, Faculty of Technology and Education, Helwan University, Saray-El Qoupa, El Sawah Street, Cairo, 11281, Egypt.

出版信息

Sci Rep. 2024 Aug 20;14(1):19295. doi: 10.1038/s41598-024-63176-8.

DOI:10.1038/s41598-024-63176-8
PMID:39164269
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11336101/
Abstract

PMMA/PEG and PMMA/PEG doped with SiO, TiO and AlO were fabricated using the solution-casting technique. The composites were characterized by X-ray diffraction and scanning electron microscopy (FE-SEM), which revealed that the amorphous nature of PMMA/PEG blend doped with AlO was hindered by the crystalline nature of those doped with SiO and TiO. The absorption of PMMA/PEG blend doped with AlO is higher, band gap energies were decreased from 4.90 eV for PMMA/PEG blend to 4.03 eV, 3.09 eV, and 2.09 eV for SiO, TiO, and AlO doped PMMA/PEG blend, respectively. The dielectric constant, ε' has a high value (2 × 10) for samples PMMA/PEG and SiO/PMMA/PEG. While dielectric loss -values decreased to < 100 for TiO/PMMA/PEG and AlO/PMMA/PEG. Further, the fabricated composite SiO/PMMA/PEG led to improvement the optical and dielectric properties compared with PMMA/PEG for optoelectronic such as manufacturing of optical fiber cables application. The results show TiO/PMMA/PEG and AlO/PMMA/PEG are multifunctional can be used as low-permittivity nanodielectric and substrates to design the next generation of flexible electronic devices.

摘要

采用溶液浇铸技术制备了聚甲基丙烯酸甲酯/聚乙二醇（PMMA/PEG）以及掺杂了二氧化硅（SiO）、二氧化钛（TiO）和氧化铝（AlO）的PMMA/PEG。通过X射线衍射和扫描电子显微镜（场发射扫描电子显微镜，FE-SEM）对复合材料进行了表征，结果表明，掺杂AlO的PMMA/PEG共混物的非晶性质受到掺杂SiO和TiO的共混物的结晶性质的阻碍。掺杂AlO的PMMA/PEG共混物的吸收更高，带隙能量从PMMA/PEG共混物的4.90电子伏特分别降至掺杂SiO、TiO和AlO的PMMA/PEG共混物的4.03电子伏特、3.09电子伏特和2.09电子伏特。对于PMMA/PEG和SiO/PMMA/PEG样品，介电常数ε'具有较高的值（2×10）。而对于TiO/PMMA/PEG和AlO/PMMA/PEG，介电损耗值降至<100。此外，与用于制造光纤电缆等光电子应用的PMMA/PEG相比，制备的复合材料SiO/PMMA/PEG改善了光学和介电性能。结果表明，TiO/PMMA/PEG和AlO/PMMA/PEG具有多功能性，可作为低介电常数纳米电介质和衬底来设计下一代柔性电子器件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8d3/11336101/2608f1e26ec6/41598_2024_63176_Fig12_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8d3/11336101/5cc09e87f150/41598_2024_63176_Fig4_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8d3/11336101/053994abe108/41598_2024_63176_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8d3/11336101/a7bd08629bf3/41598_2024_63176_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8d3/11336101/9e99386dc333/41598_2024_63176_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8d3/11336101/cac24ace8d7b/41598_2024_63176_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8d3/11336101/070bc97875ee/41598_2024_63176_Fig11_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8d3/11336101/2608f1e26ec6/41598_2024_63176_Fig12_HTML.jpg

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