Xia Fengtian, Wang Dongbo, Cao Jiamu, He Wen, Zhao Chenchen, Zeng Zhi, Zhang Bingke, Liu Donghao, Liu Sihang, Pan Jingwen, Liu Gang, Jiao Shujie, Fang Dan, Fang Xuan, Liu Lihua, Zhao Liancheng, Wang Jinzhong
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150001, People's Republic of China.
School of Astronautics, Harbin Institute of Technology, Harbin, Heilongjiang 150001, People's Republic of China.
ACS Appl Mater Interfaces. 2024 Sep 4;16(35):46548-46559. doi: 10.1021/acsami.4c04447. Epub 2024 Aug 21.
With their fascinating properties, emerging two-dimensional (2D) materials offer innovative ways to prepare high-performance infrared (IR) detectors. However, the current performance of 2D IR photodetectors is still below the requirements for practical application owing to the severe interfacial recombination, sharply raised contact resistance, and deteriorated metal conductivity at nanoscale. Here, we introduce a vertical barrier heterojunction with a structure of PtSe/GaAs that combines the excellent optoelectronic properties of transition metal sulfides with topological semi-metals, which allows for an adjustable bandgap and high carrier mobility. The heterojunction was fabricated using the wet transfer method. The heterostructures show significant rectification behaviors and photovoltaic effects, which allow it to operate as a self-driven photodetector at zero bias. The photoresponse parameters at 850 nm with zero bias voltage are 67.2 mA W, 6.7 × 10 Jones, 9.8%, 3.8 × 10, 164 μs, and 198 μs for the responsivity, specific detectivity, external quantum efficiency, / ratio, rise time, and fall time, respectively. Moreover, the heterojunction is highly sensitive to a wide spectral band from ultraviolet to near-infrared (360-1550 nm). At the same time, this heterostructure demonstrates significant potential for applications in IR polarized light detection and room-temperature high-resolution IR imaging. The excellent properties of the heterojunction make it well-suited for high-performance, self-powered IR detection.
新兴的二维（2D）材料凭借其迷人的特性，为制备高性能红外（IR）探测器提供了创新方法。然而，由于严重的界面复合、纳米尺度下急剧增加的接触电阻以及金属导电性的恶化，二维红外光电探测器的当前性能仍低于实际应用的要求。在此，我们引入一种具有PtSe/GaAs结构的垂直势垒异质结，它将过渡金属硫化物与拓扑半金属的优异光电特性结合在一起，可实现可调带隙和高载流子迁移率。该异质结采用湿转移法制备。这些异质结构表现出显著的整流行为和光伏效应，使其能够在零偏压下作为自驱动光电探测器工作。在零偏压下，850 nm处的光响应参数分别为：响应度67.2 mA/W、比探测率6.7×10 Jones、外量子效率9.8%、/比3.8×10、上升时间164 μs和下降时间198 μs。此外，该异质结对从紫外到近红外（360 - 1550 nm）的宽光谱带高度敏感。同时，这种异质结构在红外偏振光检测和室温高分辨率红外成像应用中显示出巨大潜力。该异质结的优异特性使其非常适合高性能、自供电的红外探测。
