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混合相碘化铅钙钛矿纳米线中的高扩散性非发光载流子

Highly Diffusive Nonluminescent Carriers in Hybrid Phase Lead Triiodide Perovskite Nanowires.

作者信息

Zhao Chunyi, Sun Qi, Xu Peng, Chen Longwen, Shi Rumeng, Meng Lingchen, Liang Yongfu, Yin Yanfeng, Yao Guanxin, Zhang Xianyi, Lu Zhou, Tian Wenming, Jin Shengye

机构信息

Anhui Province Key Laboratory for Control and Applications of Optoelectronic Information Materials, School of Physics and Electronic Information, the Key Laboratory of Functional Molecular Solids, Ministry of Education, and Anhui Engineering Research Center of Carbon Neutrality, Anhui Normal University, Wuhu, 241002, P. R. China.

State Key Laboratory of Molecular Reaction Dynamics and the Dynamic Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, P. R. China.

出版信息

Angew Chem Int Ed Engl. 2024 Dec 9;63(50):e202411499. doi: 10.1002/anie.202411499. Epub 2024 Oct 21.

Abstract

Crystal structural rearrangements unavoidably introduce defects into materials, where even these small changes in local lattice structure could arouse a prominent impact on the overall nature of crystals. Contrary to the traditional notion that defects obstruct carrier transport, herein, we report a promoted transport mechanism of nonluminescent carriers in single-crystalline CHNHPbI nanowires (1345.2 cm V s, about a 14-fold improvement), enabled by the phase transition induced defects (PTIDs). Carriers captured by PTIDs evade both the radiative and non-radiative recombinations during the incomplete tetragonal-to-orthorhombic phase transition at low temperatures, forming a specific nonluminescent state that exhibits an efficient long-distance transport and thereby realize a prominent enhancement of photocurrent responsivity for photodetector applications. The findings provide broader insights into the carrier transport mechanism in perovskite semiconductors and have significant implications for their rational design for photoelectronic applications at varied operating temperatures.

摘要

晶体结构重排不可避免地会在材料中引入缺陷,即使是局部晶格结构的这些微小变化也可能对晶体的整体性质产生显著影响。与缺陷阻碍载流子传输的传统观念相反,在此我们报告了一种在单晶CHNHPbI纳米线中促进非发光载流子传输的机制(1345.2 cm V s,提高了约14倍),这是由相变诱导缺陷(PTIDs)实现的。在低温下不完全四方相向正交相转变过程中,被PTIDs捕获的载流子避开了辐射复合和非辐射复合,形成了一种特定的非发光状态,该状态表现出高效的长距离传输,从而实现了用于光探测器应用的光电流响应率的显著增强。这些发现为钙钛矿半导体中的载流子传输机制提供了更广泛的见解,并对其在不同工作温度下的光电子应用的合理设计具有重要意义。

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