Chen Wenhao, Zhou Shengxing, Cao Jiale, Yuan Ligang, Liu Weiqing
Key Laboratory for Optoelectronic Information Perception and Instrumentation of Jiangxi Province, Nanchang Hangkong University, Nanchang, 330063, P. R. China.
National Engineering Laboratory for Non-Destructive Testing and Optoelectronic Sensing Technology and Applications, Key Laboratory of Nondestructive Testing Ministry of Education, School of the Testing and Photoelectric Engineering, Nanchang Hangkong University, Nanchang, 330063, P. R. China.
Small Methods. 2025 Jan;9(1):e2400796. doi: 10.1002/smtd.202400796. Epub 2024 Aug 21.
Cesium lead triiodide (CsPbI) perovskites have garnered significant attention owing to their suitable bandgap for tandem silicon substrates and excellent chemical stability. However, γ-CsPbI prepared via low-temperature co-evaporation is limited by a narrow black phase processing window and random crystal orientation, hindering its optoelectronic performance and industrial applications. This study introduced trace amounts of methylammonium iodide (MAI) into the co-evaporation system, enhancing the crystallization process, promoting columnar grain growth, and stabilizing the γ-phase perovskite, resulting in films with improved structural integrity and reduced defect density. The optimal Pb/Cs ratio for achieving the best photoelectric performance shifted from 1:1 to 1.1:1 in the presence of MAI. Additionally, the incorporation of MAI allowed for more efficient longitudinal carrier transport, as evidenced by the enhanced photoluminescence (PL) intensity. The bandgap of CsPbI remained approximately at 1.7 eV before the δ-phase transition, ensuring suitability for photovoltaic applications. Ultimately, a photovoltaic device with 12% efficiency is achieved in the p-i-n structure without additional post-annealing of the CsPbI perovskite films, demonstrating the practical benefits of MAI incorporation.
碘化铯铅(CsPbI)钙钛矿因其适用于串联硅基板的带隙和出色的化学稳定性而备受关注。然而,通过低温共蒸发制备的γ-CsPbI受到狭窄的黑相处理窗口和随机晶体取向的限制,阻碍了其光电性能和工业应用。本研究将痕量甲基碘化铵(MAI)引入共蒸发系统,增强了结晶过程,促进了柱状晶粒生长,并稳定了γ相钙钛矿,从而得到结构完整性提高且缺陷密度降低的薄膜。在存在MAI的情况下,实现最佳光电性能的最佳Pb/Cs比从1:1变为1.1:1。此外,MAI的加入使得纵向载流子传输更高效,增强的光致发光(PL)强度证明了这一点。在δ相转变之前,CsPbI的带隙保持在约1.7 eV,确保了其适用于光伏应用。最终,在p-i-n结构中实现了效率为12%的光伏器件,且CsPbI钙钛矿薄膜无需额外的后退火处理,证明了加入MAI的实际益处。