Zhou Yinuo, Zhang Honghua, Li Zhenfei, Huang Shenglei, Du Junlin, Han Anjun, Shi Jianhua, Wang Guangyuan, Shi Qiang, Zhao Wenjie, Fu Haoxin, Fan Bin, Meng Fanying, Liu Wenzhu, Liu Zhengxin, Zhang Liping
Research Center for New Energy Technology, State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Changning, Shanghai 200050, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Shijingshan, Beijing 100049, China.
ACS Appl Mater Interfaces. 2024 Sep 4;16(35):46889-46896. doi: 10.1021/acsami.4c07897. Epub 2024 Aug 22.
P-type hydrogenated nanocrystalline silicon (nc-Si:H) has been used as a hole-selective layer for efficient n-type crystalline silicon heterojunction (SHJ) solar cells. However, the presence of an additional valence band offset at the interface between intrinsic amorphous hydrogenated silicon and p-type nc-Si:H films will limit the hole carrier transportation. In this work, it has been found that when a heavily boron-doped silicon oxide layer deposited with high hydrogen dilution to silane (p) was inserted into their interface, the fill factor of SHJ solar cells increases 3% absolutely because of the reduced valence band offset and the increased opportunity to provide a hopping tunnel assisted by the doping energy level and valence band tail states. Furthermore, the additional boron incorporation in intrinsic amorphous silicon adjacent to p helps to enhance the built-in electric field, thus increasing the hole selectivity. By these means, the power conversion efficiency was improved from 23.9% to approximately 25%.
P型氢化纳米晶硅（nc-Si:H）已被用作高效n型晶体硅异质结（SHJ）太阳能电池的空穴选择性层。然而，本征非晶硅与p型nc-Si:H薄膜界面处额外的价带偏移会限制空穴载流子的传输。在这项工作中，发现当在它们的界面处插入一层用高氢稀释硅烷沉积的重硼掺杂氧化硅层（p）时，SHJ太阳能电池的填充因子绝对增加了3%，这是由于价带偏移减小以及由掺杂能级和价带尾态辅助提供跳跃隧道的机会增加。此外，在与p相邻的本征非晶硅中额外掺入硼有助于增强内建电场，从而提高空穴选择性。通过这些方法，功率转换效率从23.9%提高到了约25%。
