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基于自组装3D/2D钙钛矿异质结构的高性能紫外探测器。

High-performance ultraviolet detector based on self-assembled 3D/2D perovskite heterostructure.

作者信息

Wang Haiyan, Ning Mengxin, Wang Qiaohe, Liang Yachuan, Li Sen, Li Zijiong, Wang Lingli, Wang Yan, Jiang Liying

机构信息

Academy for Quantum Science and Technology, Zhengzhou University of Light Industry Zhengzhou 450002 PR China

School of Electronics and Information, Zhengzhou University of Light Industry Zhengzhou 450002 PR China.

出版信息

RSC Adv. 2024 Aug 27;14(37):27323-27331. doi: 10.1039/d4ra05576d. eCollection 2024 Aug 22.

Abstract

Heterogeneous assembly of metal halide perovskites (MHPs) structures offers convenience for promoting the interfacial properties of perovskite heterojunctions, which have been widely used in the new generation of photoelectric devices. In this study, three-dimensional (3D) CsPbBr quantum dots (CPB QDs) were epitaxially grown on two-dimensional (2D) (BA)PbBr nanoplates (BPB NPs) self-assembly in a toluene mixing solution. The morphological, structural, and optical properties of the synthesized structure reveal that a highly-qualified interface and coherence were formed between the two different perovskites. These heterostructures (HSs) facilitate the separation and transportation of electrons and holes in opposite directions. Based on this property, a high-performance ultraviolet light detector was fabricated by depositing a layer of CPB@BPB film on a textured silicon (T-Si) substrate. The prepared CPB@BPB/T-Si detector has shown enhanced properties quick response time, high responsivity (6.9 A W), high detection rate (3.17 × 10 jones), and low detection limit (0.24 μW cm). This enhanced performance could be attributed to the large light-absorbing area, effective carrier transport channels in BPB NPs, and improved interfacial properties of the CPB@BPB HS.

摘要

金属卤化物钙钛矿(MHPs)结构的异质组装为促进钙钛矿异质结的界面性能提供了便利,这些异质结已广泛应用于新一代光电器件中。在本研究中,三维(3D)CsPbBr量子点(CPB QDs)在二维(2D)(BA)PbBr纳米片(BPB NPs)的甲苯混合溶液中自组装上外延生长。合成结构的形态、结构和光学性质表明,两种不同的钙钛矿之间形成了高质量的界面和相干性。这些异质结构(HSs)促进了电子和空穴在相反方向上的分离和传输。基于此特性,通过在纹理硅(T-Si)衬底上沉积一层CPB@BPB薄膜制备了高性能紫外光探测器。所制备的CPB@BPB/T-Si探测器表现出增强的性能,如快速响应时间、高响应度(6.9 A/W)、高探测率(3.17×10琼斯)和低探测限(0.24 μW/cm²)。这种性能的增强可归因于大的光吸收面积、BPB NPs中有效的载流子传输通道以及CPB@BPB HS改善的界面性质。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c68b/11349043/cb1895c0a142/d4ra05576d-f1.jpg

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