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陷阱深度分布决定余辉动力学:应用于ZnGaO:Cr的局部模型

Trap Depth Distribution Determines Afterglow Kinetics: A Local Model Applied to ZnGaO:Cr.

作者信息

Romero Manuel, Castaing Victor, Lozano Gabriel, Míguez Hernán

机构信息

Institute of Materials Science of Seville, Spanish National Research Council-University of Seville, C. Américo Vespucio 49, 41092 Seville, Spain.

出版信息

J Phys Chem Lett. 2024 Sep 5;15(35):9129-9135. doi: 10.1021/acs.jpclett.4c01296. Epub 2024 Aug 29.

Abstract

Persistent luminescence materials have applications in diverse fields such as smart signaling, anticounterfeiting, and in vivo imaging. However, the lack of a thorough understanding of the precise mechanisms that govern persistent luminescence makes it difficult to develop ways to optimize it. Here we present an accurate model to describe the various processes that determine persistent luminescence in ZnGaO:Cr, a workhorse material in the field. A set of rate equations has been solved, and a global fit to both charge/discharge and thermoluminescence measurements has been performed. Our results establish a direct link between trap depth distribution and afterglow kinetics and shed light on the main challenges associated with persistent luminescence in ZnGaO:Cr nanoparticles, identifying low trapping probability and optical detrapping as the main factors limiting the performance of ZnGaO:Cr, with a large margin for improvement. Our results highlight the importance of accurate modeling for the design of future afterglow materials and devices.

摘要

持续发光材料在智能信号、防伪和体内成像等不同领域都有应用。然而,由于对控制持续发光的确切机制缺乏深入了解,难以开发出优化它的方法。在此,我们提出一个精确模型来描述决定ZnGaO:Cr(该领域的一种常用材料)持续发光的各种过程。我们求解了一组速率方程,并对充电/放电和热释光测量进行了全局拟合。我们的结果建立了陷阱深度分布与余辉动力学之间的直接联系,揭示了与ZnGaO:Cr纳米颗粒持续发光相关的主要挑战,确定低俘获概率和光脱陷是限制ZnGaO:Cr性能的主要因素,还有很大的改进空间。我们的结果突出了精确建模对未来余辉材料和器件设计的重要性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b8e/11382276/7ddd9d2b23f1/jz4c01296_0001.jpg

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