ZnGa₂O₄:Cr³⁺：一种新型高亮度红色长效磷光体。

ZnGa2O4:Cr3+: a new red long-lasting phosphor with high brightness.

作者信息

Bessière Aurélie, Jacquart Sylvaine, Priolkar Kaustubh, Lecointre Aurélie, Viana Bruno, Gourier Didier

机构信息

Chimie Paristech, Laboratoire de Chimie Matière Condensée de Paris, UPMC, Collège de France, UMR - CNRS 7574, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France.

出版信息

Opt Express. 2011 May 23;19(11):10131-7. doi: 10.1364/OE.19.010131.

DOI:10.1364/OE.19.010131

PMID:21643271

Abstract

ZnGa2O4:Cr3+ is shown to be a new bright red UV excited long-lasting phosphor potentially suitable for in vivo imaging due to its 650 nm-750 nm emission range. Photoluminescence and X-ray excited radioluminescence show the 2E → 4A2 emission lines of both ideal Cr3+ and Cr3+ distorted by a neighboring antisite defect while long-lasting phosphorescence (LLP) and thermally stimulated luminescence (TSL) almost exclusively occur via distorted Cr3+. The most intense LLP is obtained with a nominal Zn deficiency and is related to a TSL peak at 335K. A mechanism for LLP and TSL is proposed, whereby the antisite defect responsible for the distortion at Cr3+ acts as a deep trap.

摘要

ZnGa2O4:Cr3+被证明是一种新型亮红色紫外激发长余辉荧光粉，由于其650纳米至750纳米的发射范围，它可能适用于体内成像。光致发光和X射线激发发光显示了理想Cr3+和被相邻反位缺陷扭曲的Cr3+的2E→4A2发射线，而长余辉磷光（LLP）和热释光（TSL）几乎完全通过扭曲的Cr3+发生。在名义上锌缺乏的情况下获得了最强的LLP，并且它与335K处的一个TSL峰有关。提出了一种LLP和TSL的机制，其中负责Cr3+处畸变的反位缺陷充当深陷阱。