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通过硫化锡单层修饰吸附去除 HF 有毒气体:分子视角。

Adsorbtive removal of HF toxic gas via tinsulfide monolayer modification: A molecular perspective.

机构信息

Nuclear science and technology research institute (NSTRI), Tehran, Iran.

Nuclear science and technology research institute (NSTRI), Tehran, Iran.

出版信息

Chemosphere. 2024 Sep;364:143231. doi: 10.1016/j.chemosphere.2024.143231. Epub 2024 Sep 1.

DOI:10.1016/j.chemosphere.2024.143231
PMID:39222698
Abstract

Hydrofluoric Acid (HF) is considered one of the most hazardous chemicals used in industrial plants. Even small exposures to HF can have fatal consequences if not promptly and properly treated. Various research teams have presented numerous substances with the objective of capturing or detecting toxic HF gas. In this study, we explore the impact of HF gas on a single layer of SnS by employing density functional theory (DFT). The interaction nature between the gas molecule and the adsorbent is elucidated by analyzing the related adsorption energy, electronic structure properties and differential charge transfer. The findings indicate that HF is physically adsorbed on the pristine SnS with an adsorption energy value of -0.63 eV. By introducing a Sn mono vacancy defect, the modification of SnS enhances the adsorption energy to -1.26 eV, resulting in a chemisorption process. Molecular fluorine (F) was discovered to undergo a barrierless reaction with SnS, resulting in the formation of fluorine-substituted SnS. It has been discovered that the substitution of fluorine atoms enhances the reactivity of SnS towards hydro-gen fluoride gas. The adsorption potential of the studied structures towards HF gas was determined to be in the following order: FSnS > V-SnS > V-SnS ∼ SnS. The current study is anticipated to offer new molecular insights that could lead to the creation of innovative devices for detecting or eliminating HF toxic gas from a specific atmosphere.

摘要

氢氟酸(HF)被认为是工业工厂中使用的最危险的化学物质之一。即使是小剂量的 HF 暴露,如果不及时和正确地处理,也会有致命的后果。许多研究小组已经提出了许多物质,旨在捕获或检测有毒的 HF 气体。在这项研究中,我们通过使用密度泛函理论(DFT)来研究 HF 气体对单层 SnS 的影响。通过分析相关的吸附能、电子结构性质和差分电荷转移,阐明了气体分子和吸附剂之间的相互作用性质。研究结果表明,HF 通过物理吸附在原始 SnS 上,吸附能值为-0.63 eV。通过引入 Sn 单空位缺陷,SnS 的修饰增强了吸附能至-1.26 eV,从而发生化学吸附过程。发现分子氟(F)与 SnS 发生无势垒反应,形成氟取代的 SnS。已经发现,氟原子的取代增强了 SnS 对氢氟酸气体的反应性。研究结构对 HF 气体的吸附势按以下顺序排列:FSnS>V-SnS>V-SnS∼SnS。预计本研究将提供新的分子见解,为开发用于从特定气氛中检测或消除 HF 有毒气体的创新设备提供可能。

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