Xu Yanyan, Li Ben-Zheng, Huang Xinlong, Liu Yuebo, Liang Zhiwen, Yang Xien, Lin Lizhang, Wang Liyang, Xia Yu, Ridenour Matthew, Huang Yujing, Zhen Yuan, Klug Achim, Pun Sio Hang, Lei Tim C, Zhang Baijun
bioRxiv. 2024 Aug 19:2024.08.15.608194. doi: 10.1101/2024.08.15.608194.
Electrophysiological recordings of neurons in deep brain regions using optogenetic stimulation are essential to understanding and regulating the role of complex neural activity in biological behavior and cognitive function. Optogenetic techniques have significantly advanced neuroscience research by enabling the optical manipulation of neural activities. Because of the significance of the technique, constant advancements in implantable optrodes that integrate optical stimulation with low-noise, large-scale electrophysiological recording are in demand to improve the spatiotemporal resolution for various experimental designs and future clinical applications. However, robust and easy-to-use neural optrodes that integrate neural recording arrays with high-intensity light emitting diodes (LEDs) are still lacking. Here, we propose a neural optrode based on Gallium Nitride (GaN) on sapphire technology, which integrates a high-intensity blue LED with a 5x2 recording array monolithically for simultaneous neural recording and optogenetic manipulation. To reduce the noise interference between the recording electrodes and the LED, which is in close physical proximity, three metal grounding interlayers were incorporated within the optrode, and their ability to reduce LED-induced artifacts during neural recording was confirmed through both electromagnetic simulations and experimental demonstrations. The capability of the sapphire optrode to record action potentials has been demonstrated by recording the firing of mitral/tuft cells in the olfactory bulbs of mice in vivo. Additionally, the elevation of action potential firing due to optogenetic stimulation observed using the sapphire probe in medial superior olive (MSO) neurons of the gerbil auditory brainstem confirms the capability of this sapphire optrode to precisely access neural activities in deep brain regions under complex experimental designs.
利用光遗传学刺激对深部脑区神经元进行电生理记录,对于理解和调节复杂神经活动在生物行为和认知功能中的作用至关重要。光遗传学技术通过实现对神经活动的光学操纵,显著推动了神经科学研究。由于该技术的重要性,人们需要不断改进可植入光电极,将光学刺激与低噪声、大规模电生理记录相结合,以提高各种实验设计和未来临床应用的时空分辨率。然而,目前仍缺乏将神经记录阵列与高强度发光二极管(LED)集成在一起的坚固且易于使用的神经光电极。在此,我们提出一种基于蓝宝石上氮化镓(GaN)技术的神经光电极,它将一个高强度蓝色LED与一个5×2记录阵列单片集成,用于同时进行神经记录和光遗传学操纵。为了减少物理距离很近的记录电极与LED之间的噪声干扰,在光电极内加入了三个金属接地中间层,并通过电磁模拟和实验演示证实了它们在神经记录过程中减少LED诱导伪迹的能力。通过在小鼠体内记录嗅球中二尖瓣/簇状细胞的放电,证明了蓝宝石光电极记录动作电位的能力。此外,使用蓝宝石探针在沙鼠听觉脑干内侧上橄榄核(MSO)神经元中观察到的光遗传学刺激引起的动作电位放电增加,证实了这种蓝宝石光电极在复杂实验设计下精确获取深部脑区神经活动的能力。