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酞菁分子与石墨烯界面的电子相互作用及功函数调谐研究。

Investigation into electronic interaction and work function tuning of phthalocyanine molecules and graphene interfaces.

作者信息

Garcia-Basabe Yunier, Suenson Cardoso Matheus, Lima Bruno da Silva, Mendoza Cesar D, Freire Junior Fernando Lázaro, Larrude Dunieskys G

机构信息

Universidade Federal da Integração Latino-Americana, UNILA, 85867-970, Foz do Iguaçu, Brazil.

School of Engineering, Mackenzie Presbyterian University, São Paulo 01302-907, Brazil.

出版信息

Phys Chem Chem Phys. 2024 Sep 25;26(37):24438-24446. doi: 10.1039/d4cp02025a.

Abstract

Understanding the interfacial electronic structures of organic semiconductor phthalocyanines (MePc) and graphene is essential for their practical application in various fields. In this study, we investigated the electronic structure and the tuning of the work function of free metal phthalocyanine (Pc4), cobalt phthalocyanine (CoPc), and copper phthalocyanine (CuPc) molecules deposited on a graphene monolayer using X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). We found that the functionalization of MePc molecules induces p-doping to the graphene substrate due to the charge transfer mechanism with the MePc molecule. XPS analysis shows that the electronic interaction at the interface between Pc molecules and graphene substrate mainly occurs through the pyrrole species. Comparatively, it was observed that the electronic coupling between graphene and CuPc is relatively stronger than that between CoPc and graphene. The electronic interaction of the CuPc/Gr sample principally occurs through the Cu 3d states of CuPc, the molecule, and the graphene 2p π states. This electronic interaction increases the work function of the graphene substrate to 5.75 eV, 6.05 eV, and 6.12 eV after depositing the Pc4, CoPc, and CuPc molecules, respectively. These results show that the MePc/Gr samples investigated in this study can be considered promising candidates for applications requiring a high work function to increase hole injection efficiency.

摘要

了解有机半导体酞菁(MePc)与石墨烯的界面电子结构对于它们在各个领域的实际应用至关重要。在本研究中,我们使用X射线光电子能谱(XPS)和紫外光电子能谱(UPS)研究了沉积在石墨烯单层上的自由金属酞菁(Pc4)、钴酞菁(CoPc)和铜酞菁(CuPc)分子的电子结构以及功函数的调谐。我们发现,由于与MePc分子的电荷转移机制,MePc分子的功能化会导致石墨烯基底发生p型掺杂。XPS分析表明,Pc分子与石墨烯基底之间的界面电子相互作用主要通过吡咯基团发生。相比之下,观察到石墨烯与CuPc之间的电子耦合比CoPc与石墨烯之间的相对更强。CuPc/Gr样品的电子相互作用主要通过CuPc分子的Cu 3d态和石墨烯的2p π态发生。在分别沉积Pc4、CoPc和CuPc分子后,这种电子相互作用将石墨烯基底的功函数提高到5.75 eV、6.05 eV和6.12 eV。这些结果表明,本研究中研究的MePc/Gr样品可被视为需要高功函数以提高空穴注入效率的应用的有前途的候选材料。

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