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用于具有 ppb 级检测限的高灵敏度三乙胺传感器的双功能钨掺杂 NiO

Dual-Functional Tungsten-Doped NiO for Highly Sensitive Triethylamine Sensor with ppb Level Detection Limit.

作者信息

Wang Shangyan, Wang Mengjie, Shao Junkai, Liang Xichen, Pan Guofeng, Qi Yuhang

机构信息

School of Electronics and Information Engineering, Tianjin Key Laboratory of Electronic Materials and Devices, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401, China.

Hebei Collaborative Innovation Center of Microelectronic Materials and Technology on Ultra Precision Processing, Hebei Engineering Research Center of Microelectronic Materials and Devices (ERC), Tianjin 300130, China.

出版信息

ACS Appl Mater Interfaces. 2024 Sep 25;16(38):51354-51363. doi: 10.1021/acsami.4c12495. Epub 2024 Sep 12.

DOI:10.1021/acsami.4c12495
PMID:39264240
Abstract

In this study, the W-doped Nickel oxide (NiO) nanoflowers were synthesized using a straightforward hydrothermal method, significantly enhancing the sensing performance toward triethylamine through dual-functional tungsten doping. The optimal doping concentration not only increased the specific surface area of NiO from 25.54 to 189.19 m g but also reduced the formation energy of oxygen vacancies. The sensor containing 4 at % W-doped NiO demonstrated exceptional sensitivity to triethylamine, achieving a detection level as high as 229.0 for concentrations of 100 ppm at 237.5 °C. This triethylamine sensor represents a 135-fold enhancement over sensors fabricated from undoped NiO, and offers a rapid response/recovery time of 8 and 30 s, respectively. Furthermore, at a lower triethylamine concentration of 50 ppb, indicating a lower detection limit.

摘要

在本研究中,采用简单的水热法合成了W掺杂的氧化镍(NiO)纳米花,通过双功能钨掺杂显著提高了对三乙胺的传感性能。最佳掺杂浓度不仅将NiO的比表面积从25.54增加到189.19 m²/g,还降低了氧空位的形成能。含有4 at% W掺杂NiO的传感器对三乙胺表现出卓越的灵敏度,在237.5°C下,对于100 ppm的浓度,检测水平高达229.0。这种三乙胺传感器比未掺杂NiO制成的传感器提高了135倍,响应/恢复时间分别为8秒和30秒。此外,在较低的三乙胺浓度50 ppb时,表明具有较低的检测限。

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