Li Yizhuo, Zhao Jinyan, Wang Zhe, Zheng Kun, Zhang Jie, Chen Chuying, Wang Lingyan, Wang Genshui, Li Xin, Zhao Yulong, Niu Gang, Ren Wei
State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
Laboratory of Sensitive Materials and Devices, Shandong Department of Education, School of Materials Science and Engineering, Liaocheng University, Liaocheng 252059, China.
Nanomaterials (Basel). 2024 Aug 29;14(17):1411. doi: 10.3390/nano14171411.
In recent years, the development of environmentally friendly, lead-free ferroelectric films with prominent electrostrictive effects have been a key area of focus due to their potential applications in micro-actuators, sensors, and transducers for advanced microelectromechanical systems (MEMS). This work investigated the enhanced electrostrictive effect in lead-free sodium bismuth titanate-based relaxor ferroelectric films. The films, composed of (BiNa)BaSrTiO (BNBST, x = 0.02, 0.06, and 0.11), with thickness around 1 μm, were prepared using a sol-gel method on Pt/TiO/SiO/Si substrates. By varying the Ba content, the crystal structure, morphology, and electrical properties, including dielectric, ferroelectric, strain, and electromechanical performance, were investigated. The films exhibited a single pseudocubic structure without preferred orientation. A remarkable strain response ( > 0.24%) was obtained in the films (x = 0.02, 0.06) with the coexistence of nonergodic and ergodic relaxor phases. Further, in the x = 0.11 thick films with an ergodic relaxor state, an ultrahigh electrostrictive coefficient of 0.32 m/C was achieved. These findings highlight the potential of BNBST films as high-performance, environmentally friendly electrostrictive films for advanced microelectromechanical systems (MEMS) and electronic devices.
近年来，由于具有突出电致伸缩效应的环保无铅铁电薄膜在先进微机电系统（MEMS）的微致动器、传感器和换能器方面的潜在应用，其发展一直是一个关键的研究重点领域。这项工作研究了无铅钛酸铋钠基弛豫铁电薄膜中增强的电致伸缩效应。这些薄膜由（BiNa）BaSrTiO（BNBST，x = 0.02、0.06和0.11）组成，厚度约为1μm，采用溶胶 - 凝胶法在Pt/TiO/SiO/Si衬底上制备。通过改变Ba含量，研究了晶体结构、形貌以及包括介电、铁电、应变和机电性能在内的电学性能。这些薄膜呈现出无择优取向的单一赝立方结构。在具有非遍历和遍历弛豫相共存的薄膜（x = 0.02、0.06）中获得了显著的应变响应（>0.24%）。此外，在具有遍历弛豫态的x = 0.11厚薄膜中，实现了0.3₂ m/C的超高电致伸缩系数。这些发现突出了BNBST薄膜作为用于先进微机电系统（MEMS）和电子器件的高性能、环保电致伸缩薄膜的潜力。
