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实现效率超过20%的锑(硫,硒)太阳能电池的优化路径

An Optimization Path for Sb(S,Se) Solar Cells to Achieve an Efficiency Exceeding 20.

作者信息

Xiong Xiaoyong, Ding Chao, Jiang Bingfeng, Zeng Guanggen, Li Bing

机构信息

College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China.

Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu 610065, China.

出版信息

Nanomaterials (Basel). 2024 Sep 2;14(17):1433. doi: 10.3390/nano14171433.

Abstract

Antimony selenosulfide, denoted as Sb(S,Se), has garnered attention as an eco-friendly semiconductor candidate for thin-film photovoltaics due to its light-absorbing properties. The power conversion efficiency (PCE) of Sb(S,Se) solar cells has recently increased to 10.75%, but significant challenges persist, particularly in the areas of open-circuit voltage () losses and fill factor (FF) losses. This study delves into the theoretical relationship between and FF, revealing that, under conditions of low and FF, internal resistance has a more pronounced effect on FF compared to non-radiative recombination. To address and FF losses effectively, a phased optimization strategy was devised and implemented, paving the way for Sb(S,Se) solar cells with PCEs exceeding 20%. By optimizing internal resistance, the FF loss was reduced from 10.79% to 2.80%, increasing the PCE to 12.57%. Subsequently, modifying the band level at the interface resulted in an 18.75% increase in , pushing the PCE above 15%. Furthermore, minimizing interface recombination reduced loss to 0.45 V and FF loss to 0.96%, enabling the PCE to surpass 20%. Finally, by augmenting the absorber layer thickness to 600 nm, we fully utilized the light absorption potential of Sb(S,Se), achieving an unprecedented PCE of 26.77%. This study pinpoints the key factors affecting and FF losses in Sb(S,Se) solar cells and outlines an optimization pathway that markedly improves device efficiency, providing a valuable reference for further development of high-performance photovoltaic applications.

摘要

硒硫化锑,记为Sb(S,Se),因其吸光特性作为薄膜光伏的一种环保型半导体候选材料而受到关注。Sb(S,Se)太阳能电池的功率转换效率(PCE)最近已提高到10.75%,但仍存在重大挑战,特别是在开路电压()损失和填充因子(FF)损失方面。本研究深入探讨了与FF之间的理论关系,结果表明,在低和FF条件下,与非辐射复合相比,内阻对FF的影响更为显著。为有效解决和FF损失问题,设计并实施了分阶段优化策略,为PCE超过20%的Sb(S,Se)太阳能电池铺平了道路。通过优化内阻,FF损失从10.79%降至2.80%,PCE提高到12.57%。随后,修改界面处的能带水平使增加了18.75%,将PCE推至15%以上。此外,最小化界面复合将损失降至0.45 V,FF损失降至0.96%,使PCE超过20%。最后,通过将吸收层厚度增加到600 nm,我们充分利用了Sb(S,Se)的光吸收潜力,实现了前所未有的26.77%的PCE。本研究指出了影响Sb(S,Se)太阳能电池和FF损失的关键因素,并概述了一条显著提高器件效率的优化途径,为高性能光伏应用的进一步发展提供了有价值的参考。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e166/11397007/02c54a7b653f/nanomaterials-14-01433-g001.jpg

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