Ranaut Dheeraj, Sihi Antik, Saravanan M P, Deepshikha Jaiswal-Nagar, Mukherjee K
School of Physical Sciences, Indian Institute of Technology Mandi, Mandi 175075, Himachal Pradesh, India.
School of Physics, IISER Thiruvananthapuram, Vithura, Thiruvananthapuram 695551, India.
J Phys Condens Matter. 2024 Sep 26;36(50). doi: 10.1088/1361-648X/ad7aca.
The= ½ state: a result of interplay of strong electronic correlations () with spin-orbit coupling (SOC) and crystal field splitting, offers a platform in the research of quantum materials. In this context, 4rare-earth based materials offer a fertile playground. Here, strong experimental and theoretical evidences for a= ½ state is established in a three-dimensional spin system NdVO. Magnetic measurements show the signatures of a SOC driven= ½ state along with the presence of antiferromagnetic (AFM) interaction between Ndmoments, whereas, heat capacity reveals the presence of an AFM ordering around 0.8 K, within this state. An entropy of Rln2 (equivalent to= ½) is released around 4 K which implies the presence of= ½ state at low temperatures. Total energy calculations within the density functional theory (DFT) framework reflect the central role of SOC in driving the Ndions to host such a state with AFM correlations between them, which is in agreement with experimental results. Further, DFT + SOC calculations with and without the inclusion of, points that electron-electron correlations give rise to the insulating state making NdVOa potential candidate for-driven correlated Mott insulator.
是强电子关联( )与自旋轨道耦合(SOC)以及晶体场分裂相互作用的结果,为量子材料的研究提供了一个平台。在这种情况下,基于稀土的材料提供了一个丰富的研究领域。在此,在三维自旋系统NdVO中建立了关于半整数态的有力实验和理论证据。磁性测量显示出SOC驱动的半整数态的特征以及Nd磁矩之间反铁磁(AFM)相互作用的存在,而热容揭示了在该状态下约0.8 K处存在AFM有序化。在4 K左右释放出Rln2的熵(相当于半整数),这意味着在低温下存在半整数态。密度泛函理论(DFT)框架内的总能量计算反映了SOC在驱动Nd离子形成具有它们之间AFM关联的这种状态中所起的核心作用,这与实验结果一致。此外,包含和不包含 的DFT + SOC计算表明,电子 - 电子关联导致绝缘态,使NdVO成为由 驱动的相关莫特绝缘体的潜在候选者。