Hüger Erwin, Stahn Jochen, Schmidt Harald
Institute of Metallurgy, Solid State Kinetics Group, Clausthal University of Technology, Clausthal-Zellerfeld 38678, Germany.
Clausthal Center for Materials Technology, Clausthal-Zellerfeld 38678, Germany.
ACS Mater Au. 2024 Jul 23;4(5):537-546. doi: 10.1021/acsmaterialsau.4c00046. eCollection 2024 Sep 11.
Ge Si alloys are gaining renewed interest for many applications in electronics and optics, especially for miniaturized devices showing quantum size effects. Point defects and atomic diffusion play a crucial role in miniaturized and metastable systems. In the present work, Ge self-diffusion in sputter deposited amorphous Ge Si alloys is studied in situ as a function of Ge content = 0.13, 0.43, 0.8, and 1.0 by neutron reflectometry. The determined Ge self-diffusivities obey the Arrhenius law in the investigated temperature ranges. The higher the Ge content , the higher the Ge self-diffusivity at the same temperature. The activation enthalpy decreases with from 4.4 eV for self-diffusion in pure silicon films to about 2 eV self-diffusion in GeSi and Ge. The decrease of the activation enthalpy for amorphous Ge Si is similar to the case of crystalline Ge Si . Possible explanations are discussed.
锗硅合金在电子学和光学领域的许多应用中重新引起了人们的兴趣，特别是对于呈现量子尺寸效应的小型化器件。点缺陷和原子扩散在小型化和亚稳系统中起着至关重要的作用。在本工作中，通过中子反射法原位研究了溅射沉积的非晶锗硅合金中锗的自扩散与锗含量（= 0.13、0.43、0.8和1.0）的关系。在所研究的温度范围内，测定的锗自扩散系数服从阿仑尼乌斯定律。锗含量越高，在相同温度下锗的自扩散系数越高。激活焓随着锗含量的增加而降低，从纯硅膜中自扩散的4.4电子伏特降至锗硅和锗中自扩散的约2电子伏特。非晶锗硅激活焓的降低与晶体锗硅的情况相似。文中讨论了可能原因。
