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原子力显微镜(AFM)有序排列对MgX(X:C、Si、Ge)单层热电响应的影响:基于密度泛函理论(DFT)的见解

Effect of AFM ordering on thermoelectric responses of MgX(X: C, Si, Ge) monolayers : a DFT insight.

作者信息

Basak Krishnanshu, Ghosal Supriya, Nath Subhadip, Jana Susmita, Jana Debnarayan

机构信息

Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009, India.

Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, Karnataka 560064, India.

出版信息

J Phys Condens Matter. 2024 Oct 14;37(1). doi: 10.1088/1361-648X/ad7e72.

DOI:10.1088/1361-648X/ad7e72
PMID:39312937
Abstract

Two-dimensional materials have gained a lot of attention in the last few decades due to their potential applications in thermoelectric and nano-electronic devices. This study systematically presents the mechanical, electronic and thermoelectric characteristics of two-dimensional honeycomb-kagomeMg3X2(X:C,Si,Ge) structures in the framework of density functional theory computations and by solving semiclassical Boltzmann transport equation. The geometrical stability of these structures is validated by phonon spectrum and molecular dynamics simulations. Following the elastic constants, we have inferred that all the systems are mechanically stable and brittle in nature. Lower values of Debye temperature of all structures suggest thatMg3X2monolayers should have lower values of lattice thermal conductivity compared to graphene. Electronic structure calculations indicate that these materials are semimetallic in their nonmagnetic phase. All the structures display remarkably low lattice thermal conductivity (0.9-1.5 W (mK)) due to a large scattering factor and higher anharmonicity. The presence of sharp density of states peaks close to the Fermi level, arising from nearly flat and dispersionless band in the antiferromagnetic (AFM) arrangement, is poised to enhance the Seebeck coefficient, thereby potentially boosting the thermoelectric performance. The estimated values of thermoelectric figure of merit () are around 0.78 and 0.67 forMg3Si2andMg3Ge2structure respectively in AFM phase at= 700 K. These outcomes of our findings suggest thatMg3X2monolayers exhibit substantial promise for thermoelectric device application.

摘要

在过去几十年中,二维材料因其在热电和纳米电子器件中的潜在应用而备受关注。本研究在密度泛函理论计算框架下,通过求解半经典玻尔兹曼输运方程,系统地呈现了二维蜂窝 - Kagome结构Mg3X2(X:C、Si、Ge)的力学、电子和热电特性。这些结构的几何稳定性通过声子谱和分子动力学模拟得到验证。根据弹性常数,我们推断所有系统在本质上都是机械稳定且脆性的。所有结构的德拜温度较低,这表明与石墨烯相比,Mg3X2单层的晶格热导率应该更低。电子结构计算表明,这些材料在非磁性相中是半金属性的。由于大的散射因子和更高的非谐性,所有结构都表现出极低的晶格热导率(0.9 - 1.5 W/(mK))。在反铁磁(AFM)排列中,由于接近费米能级处存在尖锐的态密度峰,这源于几乎平坦且无色散的能带,有望提高塞贝克系数,从而潜在地提升热电性能。在700 K时,AFM相中的Mg3Si2和Mg3Ge2结构的热电优值()估计值分别约为0.78和0.67。我们的这些研究结果表明,Mg3X2单层在热电器件应用方面展现出巨大的潜力。

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