Lihm Jae-Mo, Park Cheol-Hwan
Department of Physics and Astronomy, <a href="https://ror.org/04h9pn542">Seoul National University</a>, Seoul 08826, Korea; Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea and Center for Theoretical Physics, <a href="https://ror.org/04h9pn542">Seoul National University</a>, Seoul 08826, Korea.
Phys Rev Lett. 2024 Sep 13;133(11):116402. doi: 10.1103/PhysRevLett.133.116402.
Although plasmons and phonons are the collective excitations that govern the low-energy physics of doped semiconductors, their nonadiabatic hybridization and mutual screening have not been studied from first principles. We achieve this goal by transforming the Dyson equation to the frequency-independent dynamical matrix of an equivalent damped oscillator. Calculations on doped GaAs and TiO_{2} agree well with available Raman data and await immediate experimental confirmation from infrared, neutron, electron-energy-loss, and angle-resolved photoemission spectroscopies.
尽管等离激元和声子是支配掺杂半导体低能物理的集体激发，但它们的非绝热杂化和相互屏蔽尚未从第一性原理进行研究。我们通过将戴森方程转化为等效阻尼振子的与频率无关的动力学矩阵来实现这一目标。对掺杂砷化镓和二氧化钛的计算结果与现有的拉曼数据吻合良好，并有待红外、中子、电子能量损失和角分辨光电子能谱的实验立即验证。
