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范德华层状InSe中铁电极化的皮米级原位操纵

Picometer-Level In Situ Manipulation of Ferroelectric Polarization in Van der Waals layered InSe.

作者信息

Gao Hanbin, Liu Ziyuan, Gong Yue, Ke Changming, Guo Ning, Wu Juanxia, Zeng Xin, Guo Jianfeng, Li Songyang, Cheng Zhihai, Li Jiawei, Zhu Hongwei, Zhang Li-Zhi, Liu Xinfeng, Liu Shi, Xie Liming, Zheng Qiang

机构信息

CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China.

Laboratory of Theoretical and Computational Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China.

出版信息

Adv Mater. 2024 Nov;36(47):e2404628. doi: 10.1002/adma.202404628. Epub 2024 Oct 4.

Abstract

Ferroelectric 2D van der Waals (vdW) layered materials are attracting increasing attention due to their potential applications in next-generation nanoelectronics and in-memory computing with polarization-dependent functionalities. Despite the critical role of polarization in governing ferroelectricity behaviors, its origin and relation with local structures in 2D vdW layered materials have not been fully elucidated so far. Here, intralayer sliding of approximately six degrees within each quadruple-layer of the prototype 2D vdW ferroelectrics InSe is directly observed and manipulated using sub-angstrom resolution imaging and in situ biasing in an aberration-corrected scanning transmission electron microscope. The in situ electric manipulation further indicates that the reversal of intralayer sliding can be achieved by altering the electric field direction. Density functional theory calculations reveal that the reversible picometer-level intralayer sliding is responsible for switchable out-of-plane polarization. The observation and manipulation of intralayer sliding demonstrate the structural origin of ferroelectricity in InSe and establish a dynamic structural variation model for future investigations on more 2D ferroelectric materials.

摘要

铁电二维范德华(vdW)层状材料因其在下一代纳米电子学和具有极化相关功能的内存计算中的潜在应用而受到越来越多的关注。尽管极化在控制铁电行为中起着关键作用,但其起源以及与二维vdW层状材料中局部结构的关系迄今尚未完全阐明。在此,利用亚埃分辨率成像和像差校正扫描透射电子显微镜中的原位偏置,直接观察并操纵了原型二维vdW铁电体InSe的每个四重层内约6度的层内滑动。原位电操纵进一步表明,通过改变电场方向可以实现层内滑动的反转。密度泛函理论计算表明,可逆的皮米级层内滑动是可切换的面外极化的原因。层内滑动的观察和操纵揭示了InSe中铁电性的结构起源,并为未来对更多二维铁电材料的研究建立了动态结构变化模型。

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