Astié Vincent, Wasem Klein Felipe, Makhlouf Houssin, Paillet Matthieu, Huntzinger Jean-Roch, Sauvajol Jean-Louis, Zahab Ahmed-Azmi, Juillaguet Sandrine, Contreras Sylvie, Voiry Damien, Landois Périne, Decams Jean-Manuel
Annealsys, 139 Rue des Walkyries, 34000 Montpellier, France.
Laboratoire Charles Coulomb, Université de Montpellier, CNRS, Montpellier, F-34095, France.
Phys Chem Chem Phys. 2024 Oct 17;26(40):25772-25779. doi: 10.1039/d4cp00603h.
Large-scale, high-quality growth of transition metal dichalcogenides (TMD) of controlled thickness is paramount for many applications in opto- and microelectronics. This paper describes the direct growth of well-controlled large area molybdenum disulfide (MoS) on Si/SiO substrates by direct liquid injection pulsed-pressure metal-organic chemical vapor deposition (DLI-PP-MOCVD) using low-toxicity precursors. It is shown that control of the deposited thickness can be achieved by carefully tuning the amount of molybdenum precursor evaporated and that continuous layers are routinely obtained. Homogeneity and reproducibility have also been examined, as well as the average size of the grains. When targeting monolayer thickness, the MoS showed near stoichiometry (S/Mo = 1.93-1.95), low roughness and high photoluminescence (PL) quantum yield, equivalent to exfoliated monolayers and CVD MoS grown on the same substrates.
对于光电子学和微电子学中的许多应用而言，生长具有可控厚度的大规模、高质量过渡金属二硫属化物（TMD）至关重要。本文描述了通过使用低毒性前驱体的直接液体注入脉冲压力金属有机化学气相沉积（DLI-PP-MOCVD），在Si/SiO衬底上直接生长可控大面积二硫化钼（MoS）的方法。结果表明，通过仔细调节蒸发的钼前驱体的量可以实现对沉积厚度的控制，并且常规地获得连续层。还研究了均匀性、可重复性以及晶粒的平均尺寸。当目标是单层厚度时，MoS表现出接近化学计量比（S/Mo = 1.93 - 1.95）、低粗糙度和高光致发光（PL）量子产率，与在相同衬底上生长的剥离单层和化学气相沉积MoS相当。
