TaSBr: A Cluster Mott Insulator with a Corrugated, Van der Waals Layered Structure.

The compound TaSBr was prepared by a comproportionation reaction of tantalum bromide with tantalum and elemental sulfur. The crystal structure, as refined by single-crystal X-ray diffraction, is composed of clusters with TaS cores, arranged in corrugated van der Waals layers. Individual layers appear to be displaced relative to each other along one direction. Successful crystal growth in a melt of CsBr yielded black platelets of TaSBr, which were used to investigate the electrical properties of the compound. The electronic structure was studied by diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy and by density functional theory (DFT) band structure calculations, revealing this material to be a small-gap semiconductor. DFT results, in combination with magnetic susceptibility measurements, suggest that metallicity originating from the one unpaired Ta d electron per cluster is most likely suppressed by electronic correlations, forming a cluster Mott insulator.