Zou Xiaorong, Bai Yingxi, Dai Ying, Huang Baibiao, Niu Chengwang
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
Mater Horiz. 2024 Dec 9;11(24):6416-6422. doi: 10.1039/d4mh00620h.
CrI offers an intriguing platform for exploring fundamental physics and the innovative design of spintronics devices in two-dimensional (2D) magnets, and moreover has been instrumental in the study of topological physics. However, the 2D CrI monolayer and bilayers have long been thought to be topologically trivial. Here we uncover a hidden facet of the band topology of 2D CrI by showing that both the CrI monolayer and bilayers are second-order topological insulators (SOTIs) with a nonzero second Stiefel-Whitney number = 1. Furthermore, the topologically nontrivial nature can be explicitly confirmed the emergence of floating edge states and in-gap corner states. Remarkably, in contrast to most known magnetic topological states, we put forward that the SOTIs in 2D CrI monolayer and bilayers are highly robust against magnetic transitions, which remain intact under both ferromagnetic and antiferromagnetic configurations. These interesting predictions not only provide a comprehensive understanding of the band topology of 2D CrI but also offer a favorable platform to realize magnetic SOTIs for spintronics applications.
CrI为探索二维(2D)磁体中的基础物理和自旋电子器件的创新设计提供了一个引人入胜的平台,并且在拓扑物理研究中发挥了重要作用。然而,长期以来,二维CrI单层和双层一直被认为是拓扑平凡的。在这里,我们通过表明CrI单层和双层都是具有非零第二斯蒂费尔 - 惠特尼数 = 1的二阶拓扑绝缘体(SOTIs),揭示了二维CrI能带拓扑的一个隐藏方面。此外,拓扑非平凡性质可以通过出现的浮动边缘态和带隙角态明确确认。值得注意的是,与大多数已知的磁拓扑态不同,我们提出二维CrI单层和双层中的SOTIs对磁转变具有高度鲁棒性,在铁磁和反铁磁配置下都保持不变。这些有趣的预测不仅提供了对二维CrI能带拓扑的全面理解,还为自旋电子学应用实现磁SOTIs提供了一个良好的平台。