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钒掺杂WSe单层中的巨谷塞曼分裂

Giant Valley Zeeman Splitting in Vanadium-Doped WSe Monolayers.

作者信息

Sousa Frederico B, Matos Matheus J S, Carvalho Bruno R, Liu Mingzu, Ames Alessandra, Zhou Da, Resende Geovani C, Yu Zhuohang, Lafeta Lucas, Pimenta Marcos A, Terrones Mauricio, Teodoro Marcio D, Chacham Helio, Malard Leandro M

机构信息

Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais, 30123-970, Brazil.

Departamento de Física, Universidade Federal de São Carlos, São Carlos, São Paulo, 13565-905, Brazil.

出版信息

Small. 2024 Dec;20(51):e2405434. doi: 10.1002/smll.202405434. Epub 2024 Oct 8.

DOI:10.1002/smll.202405434
PMID:39377370
Abstract

2D dilute magnetic semiconductors (DMS) based on transition metal dichalcogenides (TMD) offer an innovative pathway for advancing spintronic technologies, including the potential to exploit phenomena such as the valley Zeeman effect. However, the impact of magnetic ordering on the valley degeneracy breaking and on the enhancement of the optical transitions g-factors of these materials remains an open question. Here, a giant effective g-factors ranging between ≈-27 and -69 for the bound exciton at 4 K in vanadium-doped WSe monolayers, obtained through magneto-photoluminescence (PL) experiments is reported. This giant g-factor disappears at room temperature, suggesting that this response is associated with a magnetic ordering of the vanadium impurity states at low temperatures. Ab initio calculations for the vanadium-doped WSe monolayer confirm the existence of magnetic ordering of the vanadium states, which leads to degeneracy breaking of the valence bands at K and K'. A phenomenological analysis is employed to correlate this splitting with the measured enhanced effective g-factor. The findings shed light on the potential of defect engineering of 2D materials for spintronic applications.

摘要

基于过渡金属二硫属化物(TMD)的二维稀磁半导体(DMS)为推进自旋电子技术提供了一条创新途径,包括利用诸如谷塞曼效应等现象的潜力。然而,磁性有序对这些材料的谷简并度破坏以及光学跃迁g因子增强的影响仍然是一个悬而未决的问题。在此,报道了通过磁光致发光(PL)实验在掺钒WSe单分子层中4K温度下获得的束缚激子的巨大有效g因子,范围约为-27至-69。这个巨大的g因子在室温下消失,表明这种响应与低温下钒杂质态的磁性有序有关。对掺钒WSe单分子层的从头算计算证实了钒态磁性有序的存在,这导致了K和K'处价带的简并度破坏。采用唯象分析将这种分裂与测量到的增强有效g因子相关联。这些发现揭示了二维材料缺陷工程在自旋电子应用中的潜力。

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