Huang Jiangping, Deng Lian, Zhang Yu, Pan Yue, Li Xu, Chen Xiuli, Zhou Huanfu
Key Laboratory of New Processing Technology for Nonferrous Metal and Materials, Ministry of Education, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China.
ACS Appl Mater Interfaces. 2024 Oct 23;16(42):57334-57345. doi: 10.1021/acsami.4c11161. Epub 2024 Oct 9.
Dielectric capacitors with a high power density are widely used in various pulsed power electronic systems. However, their low comprehensive energy storage performance severely limits the development of these systems in terms of miniaturization and lightweight design. Herein, we achieved decent energy storage performance in a class of (BiNa)BaTiO (BNTBT)-based ceramics by synergistically manipulating domain configurations and grain boundary densities. High-resolution transmission electron microscopy and piezoresponse force microscopy confirm that composition-driven refined domain configurations with weak polarity effectively improve the polarization response of BNTBT-based ceramics. The results of experimental and phase-field simulation analysis indicate that the refined grain size contributes to its high breakdown electric strength (). Benefiting from the high polarization difference (Δ) of 32.62 μC/cm, delayed saturation polarization behavior, and an ultrahigh of 815.00 kV/cm, BNT-based ceramics simultaneously achieve a high energy storage density () of ∼12.25 J/cm and an efficiency (η) of ∼86.90%. Because of these structure-induced advantages, the ceramics also exhibit good energy storage temperature stability in the range of 30-150 °C. We believe that the findings of this work may provide practical guidance for the development of high-performance energy storage ceramics.
具有高功率密度的介电电容器广泛应用于各种脉冲功率电子系统中。然而，它们较低的综合储能性能在小型化和轻量化设计方面严重限制了这些系统的发展。在此，我们通过协同调控畴结构和晶界密度，在一类基于（BiNa）BaTiO（BNTBT）的陶瓷中实现了良好的储能性能。高分辨率透射电子显微镜和压电力显微镜证实，由成分驱动的具有弱极性的精细畴结构有效地改善了基于BNTBT陶瓷的极化响应。实验和相场模拟分析结果表明，细化的晶粒尺寸有助于提高其高击穿电场强度（）。受益于32.62 μC/cm的高极化差（Δ）、延迟的饱和极化行为以及815.00 kV/cm的超高（），基于BNT的陶瓷同时实现了约12.25 J/cm的高储能密度（）和约86.90%的效率（η）。由于这些结构诱导的优势，该陶瓷在30 - 150 °C范围内还表现出良好的储能温度稳定性。我们相信这项工作的发现可能为高性能储能陶瓷的发展提供实际指导。
