Zhang Yi, Gao Zhexuan, Li Yinyan, Wang Huanping, Zhao Shilong, Shen Yang, Deng Degang, Xu Shiqing, Yu Hua
Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou, Zhejiang 310018, People's Republic of China.
Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, People's Republic of China.
ACS Appl Mater Interfaces. 2024 Oct 23;16(42):57316-57324. doi: 10.1021/acsami.4c10476. Epub 2024 Oct 10.
Here, near-infrared broad dual-band emission phosphors were achieved through energy transfer between Cr and Ni ions in the β-GaO host. All samples co-doped with Cr and Ni exhibit dual-band emission covering 600-1700 nm under 430 nm excitation. Thanks to the doping of Cr ions, the emission intensity of GaO:Cr, Ni phosphors has increased by about 2.4 times and the internal quantum efficiency has increased by 83.2% compared to GaO:Ni phosphors. Meanwhile, when the fluorescence lifetime was monitored at 745 nm, an efficient energy transfer between Cr and Ni ions in the β-GaO host was verified. Due to the significant differences in the emission temperature-sensitive properties of Cr and Ni ions, a thermometer was designed utilizing fluorescence intensity ratio technology, achieving a maximum relative sensitivity of 5.26% K, which surpasses most optical temperature measurement phosphors. This suggests that GaO:Cr, Ni samples hold promise as potential candidates for optical thermometer materials. Additionally, the broadband near-infrared emission of the GaO:Cr, Ni sample has been investigated for potential applications in component analysis and night vision, demonstrating its versatility for multifunctional applications.
在此,通过β-GaO基质中Cr和Ni离子之间的能量转移实现了近红外宽带双波段发射荧光粉。所有共掺杂Cr和Ni的样品在430nm激发下均表现出覆盖600-1700nm的双波段发射。由于Cr离子的掺杂,与GaO:Ni荧光粉相比,GaO:Cr,Ni荧光粉的发射强度提高了约2.4倍,内量子效率提高了83.2%。同时,当在745nm监测荧光寿命时,验证了β-GaO基质中Cr和Ni离子之间的有效能量转移。由于Cr和Ni离子发射温度敏感特性的显著差异,利用荧光强度比技术设计了一种温度计,实现了5.26%K的最大相对灵敏度,超过了大多数光学测温荧光粉。这表明GaO:Cr,Ni样品有望成为光学温度计材料的潜在候选者。此外,还研究了GaO:Cr,Ni样品的宽带近红外发射在成分分析和夜视方面的潜在应用,证明了其在多功能应用中的通用性。