Luo Lijing, Sun Qilong, Guo Meng, Jin Cui, Dai Ying
School of Science, Shandong Jianzhu University, Jinan 250101, China.
Shandong Computer Science Center (National Supercomputer Center in Jinan), Qilu University of Technology (Shandong Academy of Sciences), Jinan, Shandong 250103, China.
Langmuir. 2024 Oct 22;40(42):22145-22151. doi: 10.1021/acs.langmuir.4c02588. Epub 2024 Oct 11.
Electric field control of two-dimensional (2D) materials with optimized magnetic properties is not only of scientific interest but also of technological importance in terms of the functionality of various nanoscale devices. Here, we report the multiferroic control of the 2D ferromagnetism in 1T-CrTe monolayer through a ferroelectric InSe sublayer. Our results reveal the effect of polarization switching on the electronic structures and magnetic properties of 1T-CrTe/InSe heterostructures, enabling effective manipulation of their magnetic anisotropy energy (MAE) and magnetization orientation. Additionally, we also demonstrate the strong dependence of their MAE and switching effect on the external strain and surface hydrogenation. Notably, polarization switching exhibits a reversal modification in the hydrogenated multiferroic structures. These tunable behaviors are primarily attributed to the alteration of p-orbitals near the Fermi level of the interfacial Te atoms due to magnetoelectric coupling. Our findings suggest the potential of 1T-CrTe/InSe heterojunctions for the practical application of 2D multiferroic spintronic devices.
对具有优化磁性能的二维（2D）材料进行电场控制，不仅具有科学意义，而且就各种纳米级器件的功能而言，在技术上也具有重要意义。在此，我们报告了通过铁电InSe子层对1T-CrTe单层中的二维铁磁性进行的多铁性控制。我们的结果揭示了极化切换对1T-CrTe/InSe异质结构的电子结构和磁性能的影响，从而能够有效操纵其磁各向异性能（MAE）和磁化方向。此外，我们还证明了它们的MAE和切换效应对外加应变和表面氢化的强烈依赖性。值得注意的是，极化切换在氢化多铁性结构中表现出反向修饰。这些可调行为主要归因于由于磁电耦合导致的界面Te原子费米能级附近p轨道的变化。我们的发现表明1T-CrTe/InSe异质结在二维多铁性自旋电子器件实际应用中的潜力。
