Liu Futong, Cheng Zhuang, Dong Wei, Yan Yan, Xu Yangze, Su Zihan, Hu Yin, Wan Liang, Lu Ping
Jilin University, State Key Laboratory of Supramolecular Structure and Materials, Department of Chemistry, Changchun, 130012, P. R. China.
Angew Chem Int Ed Engl. 2025 Jan 21;64(4):e202416154. doi: 10.1002/anie.202416154. Epub 2024 Nov 11.
Multi-resonance thermally activated delayed fluorescence (MR-TADF) molecules have experienced great success in organic light-emitting diodes (OLEDs) owing to their outstanding quantum efficiencies and narrow full width at half-maximums (FWHMs). However, the reverse intersystem crossing (RISC) rates of MR-TADF emitters are usually small, which will lead to relatively long triplet exciton lifetime and severe efficiency roll-off. Here, we report an effective molecular design strategy to introduce multichannel RISC pathways and thus increase RISC rates without compromising the color fidelity and emission efficiency by the "hybridized long-short axis (HLSA)" strategy. The TPA-CN-BN shows a near-unity photoluminescence quantum yield, rapid RISC rate of 1.4×10 s, narrow FWHM of 23 nm, and small singlet-triplet energy gap (ΔE) of 0.06 eV in solution. The non-sensitized OLED based on TPA-CN-BN exhibits a narrowband emission with the FWHM of 31 nm, in company with external quantum efficiency (EQE) of 37.9 %. Notably, the device exhibits the low efficiency roll-off as the EQEs maintain 34.8 % and 21.8 % at 100 and 1000 cd m, respectively, representing the best performance for single-host OLEDs based on the BCzBN skeleton. This study provides a fresh and promising approach to realize high-performance OLEDs with high color purity and remarkable device efficiency.
多共振热激活延迟荧光(MR-TADF)分子因其出色的量子效率和半高宽(FWHM)较窄,在有机发光二极管(OLED)领域取得了巨大成功。然而,MR-TADF发射体的反向系间窜越(RISC)速率通常较小,这将导致三重态激子寿命相对较长以及严重的效率滚降。在此,我们报告一种有效的分子设计策略,即通过“长短轴杂化(HLSA)”策略引入多通道RISC途径,从而在不影响颜色保真度和发光效率的情况下提高RISC速率。TPA-CN-BN在溶液中显示出接近单位的光致发光量子产率、1.4×10 s的快速RISC速率、23 nm的窄FWHM以及0.06 eV的小单线态-三线态能隙(ΔE)。基于TPA-CN-BN的非敏化OLED表现出FWHM为31 nm的窄带发射,同时外部量子效率(EQE)为37.9 %。值得注意的是,该器件表现出低效率滚降,在100和1000 cd m时EQE分别保持在34.8 %和21.8 %,代表了基于BCzBN骨架的单主体OLED的最佳性能。这项研究为实现具有高色纯度和卓越器件效率的高性能OLED提供了一种新颖且有前景的方法。