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异质成核诱导的[111]取向混合卤化物钙钛矿用于稳定的纯红光发光二极管。

Hetero-Nucleation Induced [111]-Oriented Mixed Halide Perovskite for Stable Pure Red Light-Emitting Diodes.

作者信息

Song Yong-Hui, Tai Xiao-Lin, Ding Guan-Jie, Ma Zhen-Yu, Hao Jing-Ming, Song Kuang-Hui, Hu Ya-Lan, Li Shikuo, Lin Yue, Yao Hong-Bin

机构信息

School of Materials Science and Engineering, Anhui university, Hefei, Anhui, 230026, China.

Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China.

出版信息

Adv Mater. 2024 Nov;36(48):e2411012. doi: 10.1002/adma.202411012. Epub 2024 Oct 14.

Abstract

Mixed halide 3D perovskites are promising for bright, efficient, and wide-color gamut light-emitting diodes (LEDs) due to their excellent carrier transport, high luminescence, and easily tunable bandgaps. However, serious halide ion migration inside mixed halide 3D perovskite results in poor operational and spectral stability of the as-fabricated LEDs. Here, a hetero-nucleation crystallization strategy is reported to grow [111]-orientation preferred mixed halide 3D perovskite CsPbIBr thin films for stable pure red LEDs. This hetero-nucleation crystallization is enabled by the addition of phosphoric acid (HPO) complexation, which promotes the growth of small perovskite grains into large grains with uniform [111]-orientation. The obtained [111]-orientation preferred film exhibits excellent stability under light or electric field stimulus as revealed by model analysis and experimental results compared to that of [001]-orientation preferred film. Thus, based on the [111]-orientation preferred film, the fabricated LED exhibits an external quantum efficiency of 22.8%, a maximum brightness of 12 000 cd m, and a half-life time of 4080 min under 1.5 mA cm. More importantly, the electroluminescence spectrum of the device remains stable during the continuous operation of 4080 min, showcasing the significant spectral stability improvement enabled by the hetero-nucleation induced [111]-orientation strategy.

摘要

混合卤化物三维钙钛矿因其优异的载流子传输、高发光率和易于调节的带隙,有望用于制造明亮、高效和广色域发光二极管(LED)。然而,混合卤化物三维钙钛矿内部严重的卤离子迁移导致所制备的LED的工作稳定性和光谱稳定性较差。在此,报道了一种异质成核结晶策略,用于生长具有[111]取向偏好的混合卤化物三维钙钛矿CsPbIBr薄膜,以制备稳定的纯红色LED。这种异质成核结晶是通过添加磷酸(HPO)络合实现的,它促进小钙钛矿晶粒生长成具有均匀[111]取向的大晶粒。与[001]取向偏好的薄膜相比,模型分析和实验结果表明,所获得的具有[111]取向偏好的薄膜在光或电场刺激下表现出优异的稳定性。因此,基于具有[111]取向偏好的薄膜,所制备的LED在1.5 mA cm下的外量子效率为22.8%,最大亮度为12000 cd m,半衰期为4080分钟。更重要的是,该器件的电致发光光谱在4080分钟的连续运行过程中保持稳定,展示了异质成核诱导的[111]取向策略所带来的显著光谱稳定性改善。

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