Krishnan Radha, Gan Beng Yee, Hsueh Yu-Ling, Huq A M Saffat-Ee, Kenny Jonathan, Rahman Rajib, Koh Teck Seng, Simmons Michelle Y, Weber Bent
School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore.
School of Physics, University of New South Wales, Sydney, NSW 2052, Australia.
Adv Mater. 2024 Dec;36(49):e2405916. doi: 10.1002/adma.202405916. Epub 2024 Oct 15.
While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, spin-orbit coupling (SOC) is intrinsically weak, however, it can be enhanced at surfaces and interfaces, or through atomic placement. Here it is showed that the strength of the spin-orbit coupling can be locally enhanced by more than two orders of magnitude in the manybody wave functions of multi-donor quantum dots compared to a single donor, reaching strengths so far only reported for holes or two-donor system with certain symmetry. These findings may provide a pathway toward all-electrical control of donor-bound spins in silicon using electric dipole spin resonance (EDSR).
虽然自旋轨道相互作用传统上被认为是量子点自旋量子比特中的一种有害效应，但最近它正被重新审视，因为它允许通过片上交流电场进行快速相干控制。对于体硅中的电子，自旋轨道耦合（SOC）本质上较弱，然而，它可以在表面和界面处增强，或者通过原子排列来增强。本文表明，与单个施主相比，在多施主量子点的多体波函数中，自旋轨道耦合的强度可以在局部增强两个以上数量级，达到迄今仅针对具有特定对称性的空穴或双施主系统所报道的强度。这些发现可能为利用电偶极子自旋共振（EDSR）对硅中施主束缚自旋进行全电控制提供一条途径。
