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二维WO纳米片的孔边缘高活性位点增强丙酮传感性能。

Pore-edge high active sites of 2D WO nanosheets enhancing acetone sensing performance.

作者信息

Guan Yawen, Li Xiang, Yang Huimin, Yang Yazhou, Du Zhenming, Hua Zheng, Wang Xiaoxia, Zeng Dawen

机构信息

The State Key Laboratory of Materials Processing and Die & Mould Technology, Department of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, PR China.

The State Key Laboratory of Materials Processing and Die & Mould Technology, Department of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, PR China.

出版信息

Talanta. 2025 Jan 1;282:127003. doi: 10.1016/j.talanta.2024.127003. Epub 2024 Oct 10.

DOI:10.1016/j.talanta.2024.127003
PMID:39406102
Abstract

The precise and timely detection of acetone is crucial for ensuring industrial production safety and for clinical diagnosis of diabetes. Therefore, developing acetone sensors with high performance is increasingly important. This work successfully introduced nano-scale holes into two-dimensional (2D) WO nanosheets by topological transformation and in-situ oxidation. The porous 2D WO nanosheets exhibit a response value of 66.29 to 10 ppm acetone gas, which is 10.8 times higher than that of commercial WO. Additionally, the detection limit is as low as 40 ppb. The introduction of pores provides more channels for the rapid diffusion and adsorption of acetone molecules. At the same time, density functional theory (DFT) calculations confirm that the W atoms exposed at the edge of the pores have higher charge activity and adsorption capacity, which provides more edge active sites for the adsorption of acetone molecules. This work proves the feasibility of the introduction of holes to improve the gas sensing performance of metal oxide semiconductors. This study offers a new approach to developing porous metal oxide semiconductor (MOS) sensors.

摘要

精确且及时地检测丙酮对于确保工业生产安全以及糖尿病的临床诊断至关重要。因此,开发高性能的丙酮传感器变得越来越重要。这项工作通过拓扑转变和原位氧化成功地在二维(2D)WO纳米片中引入了纳米级孔洞。多孔的二维WO纳米片对10 ppm丙酮气体的响应值为66.29,这比商用WO高出10.8倍。此外,检测限低至40 ppb。孔洞的引入为丙酮分子的快速扩散和吸附提供了更多通道。同时,密度泛函理论(DFT)计算证实,孔洞边缘暴露的W原子具有更高的电荷活性和吸附能力,这为丙酮分子的吸附提供了更多边缘活性位点。这项工作证明了引入孔洞以改善金属氧化物半导体气敏性能的可行性。该研究为开发多孔金属氧化物半导体(MOS)传感器提供了一种新方法。

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