Improvement of the Stability of Quantum-Dot Light Emitting Diodes Using Inorganic HfO Hole Transport Layer.

One of the major challenges in QLED research is improving the stability of the devices. In this study, we fabricated all inorganic quantum-dot light emitting diodes (QLEDs) using hafnium oxide (HfO) as the hole transport layer (HTL), a material commonly used for insulator. Oxygen vacancies in HfO create defect states below the Fermi level, providing a pathway for hole injection. The concentration of these oxygen vacancies can be controlled by the annealing temperature. We optimized the all-inorganic QLEDs with HfO as the HTL by changing the annealing temperature. The optimized QLEDs with HfO as the HTL showed a maximum luminance and current efficiency of 66,258 cd/m and 9.7 cd/A, respectively. The fabricated all-inorganic QLEDs exhibited remarkable stability, particularly when compared to devices using organic materials for the HTL. Under extended storage in ambient conditions, the all-inorganic device demonstrated a significantly enhanced operating lifetime (T) of 5.5 h, which is 11 times longer than that of QLEDs using an organic HTL. These results indicate that the all-inorganic QLEDs structure, with ITO/MoO/HfO/QDs/ZnMgO/Al, exhibits superior stability compared to organic-inorganic hybrid QLEDs.