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通过强电子-声子耦合实现锑掺杂铟基卤化物接近单位的光致发光效率

Realizing Near-Unity Photoluminescence Efficiency in Antimony-Doped Indium-Based Halides Induced by Strong Electron-Phonon Coupling.

作者信息

Yao Yuan, Peng Yuqi, Deng Zhihao, Shen Wei, Li Ming, Zhou Lei, He Rongxing

机构信息

Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education, Chongqing Key Laboratory of Soft-Matter Material Chemistry and Function Manufacturing, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, China.

出版信息

Inorg Chem. 2024 Oct 28;63(43):20878-20887. doi: 10.1021/acs.inorgchem.4c03666. Epub 2024 Oct 20.

DOI:10.1021/acs.inorgchem.4c03666
PMID:39428632
Abstract

Exploring a zero-dimensional (0D) hybrid halide with a large Stokes shift and efficient broad-band emission is highly desirable due to its enormous potential for solid-state lighting (SSL) application. However, it is still challenging to develop a highly emissive 0D hybrid halide with low toxicity and remarkable stability. Herein, we developed a novel indium-based metal halide AInCl·4HO (A = doubly protonated 1,4-diaminobutane) whose inorganic octahedrons are completely isolated by the organic cations to form the 0D structure. Experimental and theoretical studies confirmed that Sb-doped AInCl·4HO exhibits broad yellow emission with a photoluminescence quantum yield (PLQY) of up to 98%. The intense yellow emission can be attributed to the radiative recombination of triplet self-trapped excitons (STEs) in [SbCl] octahedrons caused by the strong electron-phonon coupling. Benefiting from the excellent stability and photoluminescence performance, AInCl·4HO:15%Sb was used as the yellow phosphor to prepare a white-light-emitting diode (WLED) device with a color rendering index of 87.8 and a luminous efficiency of up to 36.18 lm/W, demonstrating its potential in SSL applications. This work provides a guidance for developing environmentally friendly, efficient, and stable ultraviolet (UV)-excited broad-band emission materials.

摘要

探索具有大斯托克斯位移和高效宽带发射的零维(0D)混合卤化物因其在固态照明(SSL)应用中的巨大潜力而备受期待。然而,开发一种具有低毒性和卓越稳定性的高发射性0D混合卤化物仍然具有挑战性。在此,我们开发了一种新型的基于铟的金属卤化物AInCl·4H₂O(A = 双质子化的1,4 - 二氨基丁烷),其无机八面体被有机阳离子完全隔离以形成0D结构。实验和理论研究证实,掺锑的AInCl·4H₂O表现出宽的黄色发射,光致发光量子产率(PLQY)高达98%。强烈的黄色发射可归因于由强电子 - 声子耦合引起的[SbCl₆]八面体中三重态自陷激子(STE)的辐射复合。受益于优异的稳定性和光致发光性能,AInCl·4H₂O:15%Sb被用作黄色磷光体来制备显色指数为87.8且发光效率高达36.18 lm/W的白光发光二极管(WLED)器件,证明了其在SSL应用中的潜力。这项工作为开发环境友好、高效且稳定的紫外(UV)激发宽带发射材料提供了指导。

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