Field-Free Superconducting Diode Effect and Magnetochiral Anisotropy in FeTeSe Junctions with the Inherent Asymmetric Barrier.

Nonreciprocal electrical transport, characterized by an asymmetric relationship between the current and voltage, plays a crucial role in modern electronic industries. Recent studies have extended this phenomenon to superconductors, introducing the concept of the superconducting diode effect (SDE). The SDE is characterized by unequal critical supercurrents along opposite directions. Due to the requirement on broken inversion symmetry, the SDE is commonly accompanied by electrical magnetochiral anisotropy (eMCA) in the resistive state. Achieving a magnetic-field-free SDE with field tunability is pivotal for advancements in superconductor devices. Conventionally, field-free SDE has been achieved in Josephson junctions by intentionally intercalating an asymmetric barrier layer. Alternatively, internal magnetism was employed. Both approaches pose challenges in the selection of superconductors and fabrication processes, thereby impeding the development of SDE. Here, we present a field-free SDE in FeTeSe (FTS) junction with eMCA, a phenomenon absent in FTS single nanosheets. The field-free property is associated with the presence of a gradient oxide layer on the upper surface of each FTS nanosheet, while eMCA is linked to spin splitting arising from the absence of inversion symmetry. Both SDE and eMCA respond to magnetic fields with distinct temperature dependencies. This work presents a versatile and straightforward strategy for advancing superconducting electronics.