Zhong Chao, Alsharafi Rashed, Hu Hailong, Yu Kuibao, Yang Kaiyu, Guo Tailiang, Li Fushan
Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, China.
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China.
Nano Lett. 2024 Nov 6;24(44):14125-14132. doi: 10.1021/acs.nanolett.4c04545. Epub 2024 Oct 24.
With the development of near-eye displays, the demands for display resolution and performance are increasing. Quantum dot performance is virtually independent of pixel size, making it an efficient way to display ultrahigh resolution. However, the low efficiency of high-resolution quantum dot devices has been an urgent technical bottleneck to be solved. Here, we constructed a dense single-molecule modification layer and a leakage current blocking layer for high-resolution devices using self-assembly, thereby realizing ultrahigh-resolution, high-efficiency, and stable high-resolution quantum dot light-emitting diodes (QLEDs). The peak external quantum efficiencies of the red devices are 24.68% (8759 PPI) and 19.54% (26075 PPI), respectively, with an exceptional long lifetime (@1000 nit) up to 4871 h. In addition, we explored the feasibility of this modification strategy on non-Cd-based quantum dots. In conclusion, our strategy effectively improves the performance of high-resolution devices and provides a superior approach for realizing near-eye display applications.
随着近眼显示技术的发展，对显示分辨率和性能的要求不断提高。量子点的性能实际上与像素大小无关，这使其成为显示超高分辨率的有效方式。然而，高分辨率量子点器件的低效率一直是亟待解决的技术瓶颈。在此，我们利用自组装为高分辨率器件构建了致密的单分子修饰层和漏电流阻挡层，从而实现了超高分辨率、高效率且稳定的高分辨率量子点发光二极管（QLED）。红色器件的峰值外量子效率分别为24.68%（8759像素每英寸）和19.54%（26075像素每英寸），在1000尼特亮度下具有长达4871小时的超长寿命。此外，我们还探索了这种修饰策略在非镉基量子点上的可行性。总之，我们的策略有效提升了高分辨率器件的性能，并为实现近眼显示应用提供了一种卓越的方法。
