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基于垂直多栅、多通道神经形态晶体管的仿生伤害感受器。

A Biomimetic Nociceptor Based on a Vertical Multigate, Multichannel Neuromorphic Transistor.

机构信息

School of Integrated Circuits, Beijing Advanced Innovation Center for Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.

Key Lab of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing 100049, China.

出版信息

ACS Nano. 2024 Nov 5;18(44):30668-30680. doi: 10.1021/acsnano.4c09632. Epub 2024 Oct 27.

DOI:10.1021/acsnano.4c09632
PMID:39462258
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11546598/
Abstract

Nociceptors, crucial sensory receptors within biological systems, are essential for survival in diverse and potentially hazardous environments. Efforts to replicate nociceptors through advanced electronic devices, such as memristors and neuromorphic transistors, have achieved limited success, capturing basic nociceptive functions while more advanced characteristics like various forms of central sensitization and analgesic effect remain out of reach. Here, we introduce a vertical multigate, multichannel electrolyte-gated transistor (Vm-EGT), designed to mimic nociceptors. Utilizing the hybrid mechanism combining electric-double-layer (EDL) with ion intercalation/deintercalation in EGTs, our approach successfully replicates peripheral sensitization and desensitization characteristics of nociceptors. The intricate multigate and multichannel design of the Vm-EGT enables the emulation of more advanced nociceptive functionalities, including central sensitization and analgesic effect. Furthermore, we demonstrate that by exploiting the inherent current-voltage relationship, the Vm-EGT can simulate these advanced nociceptive features and seamlessly transition between them. Integrating a Vm-EGT with a thermistor and a heating plate, we have developed an artificial thermal nociceptor that closely mirrors the sensory attributes of its biological counterpart. Our approach significantly advances the emulation of nociceptors, providing a basis for the development of sophisticated artificial sensory systems and intelligent robotics.

摘要

伤害感受器是生物系统中至关重要的感觉受体,对于在多样化和潜在危险的环境中生存至关重要。通过先进的电子设备(如忆阻器和神经形态晶体管)来复制伤害感受器的努力取得了有限的成功,这些设备可以捕捉到基本的伤害感受功能,但更高级的特征,如各种形式的中枢敏化和镇痛效果,仍然难以实现。在这里,我们引入了一种垂直多栅、多通道电解质门控晶体管(Vm-EGT),旨在模拟伤害感受器。我们利用 EGT 中电双层(EDL)与离子嵌入/脱嵌相结合的混合机制,成功复制了伤害感受器的外周敏化和脱敏特征。Vm-EGT 的复杂多栅和多通道设计能够模拟更高级的伤害感受功能,包括中枢敏化和镇痛效果。此外,我们还证明,通过利用固有电流-电压关系,Vm-EGT 可以模拟这些先进的伤害感受特征,并在它们之间无缝切换。我们将 Vm-EGT 与热敏电阻和加热板集成在一起,开发了一种人工热伤害感受器,它可以很好地模拟其生物对应物的感觉属性。我们的方法显著推进了伤害感受器的模拟,为开发复杂的人工感觉系统和智能机器人提供了基础。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5157/11546598/aa1abcdf29cd/nn4c09632_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5157/11546598/c24a83e51d10/nn4c09632_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5157/11546598/f65f718b74ad/nn4c09632_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5157/11546598/99056875567a/nn4c09632_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5157/11546598/07a9c1dca6aa/nn4c09632_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5157/11546598/dcd1ed51ef2e/nn4c09632_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5157/11546598/aa1abcdf29cd/nn4c09632_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5157/11546598/c24a83e51d10/nn4c09632_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5157/11546598/f65f718b74ad/nn4c09632_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5157/11546598/99056875567a/nn4c09632_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5157/11546598/07a9c1dca6aa/nn4c09632_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5157/11546598/dcd1ed51ef2e/nn4c09632_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5157/11546598/aa1abcdf29cd/nn4c09632_0006.jpg

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本文引用的文献

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Adv Mater. 2024 Feb;36(7):e2310555. doi: 10.1002/adma.202310555. Epub 2023 Dec 7.
2
Achieving Reliable and Ultrafast Memristors via Artificial Filaments in Silk Fibroin.通过丝素蛋白中的人工丝来实现可靠的超快忆阻器。
Adv Mater. 2024 Jan;36(4):e2308843. doi: 10.1002/adma.202308843. Epub 2023 Dec 3.
3
A low-power vertical dual-gate neurotransistor with short-term memory for high energy-efficient neuromorphic computing.
一种用于高能效神经形态计算的低功耗垂直双栅神经晶体管,具有短期记忆功能。
Nat Commun. 2023 Oct 11;14(1):6385. doi: 10.1038/s41467-023-42172-y.
4
Halide Perovskites-Based Diffusive Memristors for Artificial Mechano-Nociceptive System.用于人工机械性痛觉感受系统的卤化物钙钛矿基扩散忆阻器
Adv Mater. 2024 Jan;36(1):e2307334. doi: 10.1002/adma.202307334. Epub 2023 Nov 23.
5
Threshold Modulative Artificial GABAergic Nociceptor.阈调制人工 GABA 能伤害感受器。
Adv Mater. 2023 Nov;35(47):e2304148. doi: 10.1002/adma.202304148. Epub 2023 Oct 22.
6
Flexible Organic-Inorganic Halide Perovskite-Based Diffusive Memristor for Artificial Nociceptors.用于人工伤害感受器的基于柔性有机-无机卤化物钙钛矿的扩散忆阻器
ACS Appl Mater Interfaces. 2023 Mar 15;15(10):13238-13248. doi: 10.1021/acsami.2c16481. Epub 2023 Mar 3.
7
ChatGPT: five priorities for research.ChatGPT:研究的五个优先事项。
Nature. 2023 Feb;614(7947):224-226. doi: 10.1038/d41586-023-00288-7.
8
ChatGPT is fun, but not an author.ChatGPT 很有趣,但不是作者。
Science. 2023 Jan 27;379(6630):313. doi: 10.1126/science.adg7879. Epub 2023 Jan 26.
9
Polarity-Differentiated Dielectric Materials in Monolayer Graphene Charge-Regulated Field-Effect Transistors for an Artificial Reflex Arc and Pain-Modulation System of the Spinal Cord.用于脊髓人工反射弧和疼痛调制系统的单层石墨烯电荷调节场效应晶体管中的极性差异化介电材料。
Adv Mater. 2022 Jul;34(30):e2202059. doi: 10.1002/adma.202202059. Epub 2022 Jun 17.
10
Nanoscopic Electrolyte-Gated Vertical Organic Transistors with Low Operation Voltage and Five Orders of Magnitude Switching Range for Neuromorphic Systems.用于神经形态系统的具有低工作电压和 5 个数量级开关范围的纳米级电解质门控垂直有机晶体管。
Nano Lett. 2022 Feb 9;22(3):973-978. doi: 10.1021/acs.nanolett.1c03832. Epub 2022 Jan 20.