Wang Jian, Xu Shuyan, Hu Chenguo
Department of Applied Physics, Chongqing Key Laboratory of Interface Physics in Energy Conversion, Chongqing University, Chongqing, 400044, P. R. China.
Adv Mater. 2024 Dec;36(50):e2409833. doi: 10.1002/adma.202409833. Epub 2024 Oct 30.
The past decade has witnessed remarkable progress in high-performance Triboelectric nanogenerators (TENG) with the design and synthesis of functional dielectric materials, the exploration of novel dynamic charge transport mechanisms, and the innovative design of architecture, making it one of the most crucial technologies for energy harvesting. High output charge density is fundamental for TENG to expand its application scope and accelerate industrialization; it depends on the dynamic equilibrium of charge generation, trapping, de-trapping, and migration within its core components. Here, this review classifies and summarizes innovative approaches to enhance the charge density of the charge generation, charge trapping, and charge collection layers. The milestone of high charge density TENG is reviewed based on material selection and innovative mechanisms. The state-of-the-art principles and techniques for generating high charge density and suppressing charge decay are discussed and highlighted in detail, and the distinct charge transport mechanisms, the technologies of advanced materials preparation, and the effective charge excitation strategy are emphatically introduced. Lastly, the bottleneck and future research priorities for boosting the output charge density are summarized. A summary of these cutting-edge developments intends to provide readers with a deep understanding of the future design of high-output TENG.
在过去十年中,高性能摩擦纳米发电机(TENG)取得了显著进展,包括功能介电材料的设计与合成、新型动态电荷传输机制的探索以及结构的创新设计,使其成为能量收集领域最关键的技术之一。高输出电荷密度是TENG扩大应用范围并加速产业化的基础;它取决于其核心组件内电荷产生、俘获、去俘获和迁移的动态平衡。在此,本综述对提高电荷产生层、电荷俘获层和电荷收集层电荷密度的创新方法进行了分类和总结。基于材料选择和创新机制,对高电荷密度TENG的里程碑进行了综述。详细讨论并重点介绍了产生高电荷密度和抑制电荷衰减的最新原理和技术,着重介绍了独特的电荷传输机制、先进材料制备技术和有效的电荷激发策略。最后,总结了提高输出电荷密度的瓶颈和未来研究重点。这些前沿发展的总结旨在让读者深入了解高输出TENG的未来设计。