Zhang Qingfang, Fan Shoutao, Zhang Jitao, Chen Qianyu, Ding Yufeng, Zheng Xiaowan, Zhang Aijuan, Cao Lingzhi, Li Bochang, Han Genquan
School of Electrical and Information Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, People's Republic of China.
College of Physics and Electronic Engineering, Xianyang Normal University, Xianyang 712000, China.
Langmuir. 2024 Nov 12;40(45):24086-24094. doi: 10.1021/acs.langmuir.4c03465. Epub 2024 Nov 1.
Gas-insulated switchgear (GIS) plays an important role as a modern power distribution device in power plants and power stations, which is commonly filled with SF insulating gas. During the equipment operation, the inevitable partial discharge causes SF to be broken down into gas (SF, SOF, SO, and HS), which degrades the insulation performance of the GIS. This paper is devoted to the detection of partial discharge and the removal of SF and SOF, which are not conducive to insulation, by exploring new gas-sensing materials for characteristic gas detection. Based on first-principles calculation, on the one hand, the most stable adsorption configurations of rhodium-decorated gallium nitride nanotubes (Rh-GaNNTs) and gas adsorption systems were obtained. On the other hand, the doping and adsorption mechanisms were analyzed by band structure, density of states, deformation charge density, and molecular orbital theory. Subsequently, the gas-sensitive performance of Rh-GaNNTs for these four impurity gases was evaluated by analyzing the sensing response and recovery time. The adsorption stability and recovery time of Rh-GaNNTs to these gases are ranked as SF > SOF > SO > HS; the order of influence of gas adsorption on sensitivity response is HS > SO > SF ≈ SOF. Calculation results show the potential of Rh-doped surfaces as reusable HS and SO sensors and suggest their use as gas scavengers to remove SF and SOF, especially SOF.
气体绝缘开关设备(GIS)作为一种现代配电设备,在发电厂和变电站中发挥着重要作用,其内部通常充有SF6绝缘气体。在设备运行过程中,不可避免的局部放电会导致SF6分解为气体(SF4、SOF2、SO2和H2S),从而降低GIS的绝缘性能。本文致力于通过探索用于特征气体检测的新型气敏材料来检测局部放电并去除不利于绝缘的SF4和SOF2。基于第一性原理计算,一方面,获得了铑修饰氮化镓纳米管(Rh-GaNNTs)与气体吸附体系的最稳定吸附构型。另一方面,通过能带结构、态密度、变形电荷密度和分子轨道理论分析了掺杂和吸附机理。随后,通过分析传感响应和恢复时间,评估了Rh-GaNNTs对这四种杂质气体的气敏性能。Rh-GaNNTs对这些气体的吸附稳定性和恢复时间排序为SF4 > SOF2 > SO2 > H2S;气体吸附对灵敏度响应的影响顺序为H2S > SO2 > SF4 ≈ SOF2。计算结果表明,Rh掺杂表面作为可重复使用的H2S和SO2传感器具有潜力,并建议将其用作气体清除剂以去除SF4和SOF2,尤其是SOF2。