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使用非易失性相变材料的可重构广角宽带太赫兹波抗反射

Reconfigurable wide-angle broadband terahertz wave antireflection using a non-volatile phase-change material.

作者信息

Lai Weien, Gou Hanguang, Huang Ding, Wu Huizhen

出版信息

Opt Lett. 2024 Nov 1;49(21):6309-6312. doi: 10.1364/OL.540501.

Abstract

Actively wide-angle broadband terahertz (THz) antireflection (AR) coatings with a flexible reconfigurability have a great potential for the development of next-generation versatile THz components and systems with high performance. Here, we present a reconfigurable wide-angle broadband THz AR coating using a phase change material GeSbTe (GST) film, which is based on the impedance matching method. The performance of GST-based AR coating can be effectively achieved by a thermal excitation, exhibiting the complete suppression of unwanted THz-wave reflections for incidence angles from 0 to 50 in the broad frequency range of 0.1-3.0 THz. Simulation and experimental results show that the GST-based AR coating can efficiently eliminate Fabry-Perot interference caused by unwanted THz-wave reflections from the substrate, thereby significantly improving the performances of THz devices. Moreover, the active AR mechanism of the GST-based coating is investigated, which elucidates the essential role of the phase transition between the amorphous and crystalline phases in changing the conductivity of the film to achieve an impedance matching condition under thermal excitation. Additionally, the non-volatile properties of GST can enable the AR coating to retain a long-term stability for optimal wave-impedance matching without power holding requirements. Our work provides a new, to the best of our knowledge, and promising way for realizing high-performance integrated THz components and systems in the future.

摘要

具有灵活可重构性的有源广角宽带太赫兹(THz)减反射(AR)涂层对于开发下一代高性能通用太赫兹组件和系统具有巨大潜力。在此,我们基于阻抗匹配方法,提出一种使用相变材料GeSbTe(GST)薄膜的可重构广角宽带太赫兹AR涂层。基于GST的AR涂层的性能可通过热激发有效实现,在0.1 - 3.0 THz的宽频率范围内,对于0至50度的入射角,能完全抑制不需要的太赫兹波反射。模拟和实验结果表明,基于GST的AR涂层可有效消除由衬底不需要的太赫兹波反射引起的法布里 - 珀罗干涉,从而显著提高太赫兹器件的性能。此外,研究了基于GST涂层的有源AR机制,阐明了非晶态和晶态之间的相变在热激发下改变薄膜电导率以实现阻抗匹配条件方面的重要作用。此外,GST的非易失性特性可使AR涂层在无功率保持要求的情况下,保持长期稳定性以实现最佳波阻抗匹配。据我们所知,我们的工作为未来实现高性能集成太赫兹组件和系统提供了一种新的且有前景的方法。

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