Ai Xinqi, Lu Feiping, Wei Yongjun, Lei Ju, Bai Yong, Wei Ziang, Chen Ziyin, Ling Weijun, Zhao Yuxiang
Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Tianshui Normal University, Tianshui, 741000, China.
Sci Rep. 2024 Nov 1;14(1):26303. doi: 10.1038/s41598-024-78155-2.
Non-radiative recombination of perovskite solar cells (PSCs) will increase as a result of the numerous crystallographic defects that the solution-grown perovskite films will cause, particularly at the grain boundary and film surface. As a result, it negatively influences the performance of the device. Consequently, lowering perovskite film defects is a useful strategy for raising the efficiency of PSCs. This study reports a grain regeneration and passivation approach that can decrease the recombination loss of the perovskite layer/charge transfer layer interface and the grain border. Guanidine iodide (GAI) treatment of perovskite films is the means by which this objective is accomplished. Unlike most methods that use GAI to post-treatment the perovskite layer or add GAI into the perovskite precursor solution, this work uses GAI for pre-treatment before spin coating the perovskite layer. It can effectively passivate surface defects and increase the grain size of perovskite films by controlling the crystallization process. The water stability of devices was enhanced, the short-circuit current (J), filling factor (FF), and power conversion efficiency (PCE) of PSCs were markedly improved, and non-radiative recombination was successfully reduced. The best efficiency of PSCs was 20.56% after the additional GAI treatment was applied to the perovskite layer, an 11.9% increase over the efficiency of the control device without GAI treatment. This method has the advantage of being simple and straightforward, providing a feasible pathway for the low-cost preparation and commercialization of PSCs.
溶液生长的钙钛矿薄膜会产生大量晶体缺陷,尤其是在晶界和薄膜表面,这将导致钙钛矿太阳能电池(PSC)的非辐射复合增加。结果,它会对器件性能产生负面影响。因此,降低钙钛矿薄膜缺陷是提高PSC效率的有效策略。本研究报告了一种晶粒再生和钝化方法,该方法可以减少钙钛矿层/电荷转移层界面和晶界处的复合损失。对钙钛矿薄膜进行碘化胍(GAI)处理是实现这一目标的手段。与大多数使用GAI对钙钛矿层进行后处理或将GAI添加到钙钛矿前驱体溶液中的方法不同,本工作在旋涂钙钛矿层之前使用GAI进行预处理。它可以通过控制结晶过程有效地钝化表面缺陷并增加钙钛矿薄膜的晶粒尺寸。提高了器件的水稳定性,显著提高了PSC的短路电流(J)、填充因子(FF)和功率转换效率(PCE),并成功减少了非辐射复合。在钙钛矿层上进行额外的GAI处理后,PSC的最佳效率为20.56%,比未进行GAI处理的对照器件的效率提高了11.9%。该方法具有简单直接的优点,为PSC的低成本制备和商业化提供了一条可行的途径。