Martínez-Morales Carmen, Arellanes-Lozada Paulina, Rodríguez Josué López, Romero-Serrano Antonio, González-García D
Instituto Politécnico Nacional, Escuela Superior de Ingeniería Química e Industrias Extractivas, Departamento de Ingeniería en Metalurgia y Materiales, UPALM-Zacatenco, Av. Instituto Politécnico Nacional s/n, Ciudad de México, CP, 07738, Mexico.
Gerencia de Investigación en Explotación, Instituto Mexicano del Petróleo, Eje Central Lázaro Cárdenas, Col. San Bartolo Atepehuacan, 07738, Mexico City, Mexico.
Heliyon. 2024 Oct 18;10(20):e39523. doi: 10.1016/j.heliyon.2024.e39523. eCollection 2024 Oct 30.
In this study, bismuth titanate (BiTiO) was synthesized from pure solid compounds and structurally characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). The electrical properties were evaluated by measuring the electrical conductivity of BiTiO at various oxygen partial pressures (pO = 10 and 10 atm) and temperatures (450 °C-750 °C). The electrical conductivity behavior was assessed during the heating and cooling processes. The material activation energies were determined based on the heating curve, which displayed Arrhenius-type behavior and activation energy slope changes, which could be attributed to point defects. When the temperature was increased from 450 °C to 750 °C at oxygen partial pressures pO = 10 atm, the electrical conductivity increased by about 62.9 %, whereas when the temperature decreased from 750 °C to 450 °C, the electrical conductivity was reduced by 35.95 %. The electrical behavior of BiTiO was analyzed by establishing its electrical conductivity and chemical activity under different oxygen partial pressures and heating-cooling conditions can allow the synthesis of materials with attractive characteristics for electronic applications.
在本研究中,钛酸铋(BiTiO)由纯固体化合物合成,并通过X射线衍射(XRD)、扫描电子显微镜(SEM)和X射线光电子能谱(XPS)对其结构进行了表征。通过测量BiTiO在各种氧分压(pO = 10 和10 atm)和温度(450 °C - 750 °C)下的电导率来评估其电学性能。在加热和冷却过程中评估电导率行为。基于加热曲线确定材料活化能,该曲线呈现阿累尼乌斯型行为和活化能斜率变化,这可归因于点缺陷。当在氧分压pO = 10 atm下温度从450 °C升高到750 °C时,电导率增加了约62.9%,而当温度从750 °C降低到450 °C时,电导率降低了35.95%。通过确定BiTiO在不同氧分压和加热 - 冷却条件下的电导率和化学活性来分析其电学行为,这有助于合成具有电子应用吸引力特性的材料。