Wang Xiaochen, Bai Tianxin, Sun Jinglu, Liu Jianyong, Su Yan, Chen Junsheng
Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
Research Center of Advanced Biological Manufacture, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China.
Nano Lett. 2024 Nov 20;24(46):14686-14694. doi: 10.1021/acs.nanolett.4c03843. Epub 2024 Nov 7.
Lead-free metal halides with tunable structures have emerged as a new class of optoelectronic materials. The arrangement of metal halide polyhedra defines their structural dimensionality and serves as a key factor influencing their optical properties. To investigate this, we synthesized four different antimony (Sb)-doped indium (In)-based metal halides, all of which possess zero-dimensional (0D) electronic structures but exhibit 3D, 2D, 1D, and 0D structural dimensionality at the molecular level. With a decreasing of structural dimensionality, their self-trapped exciton (STE) emission shows a red shift with peak position from 496 to 663 nm. We revealed that the red shift is caused by increased distortion of [SbCl] octahedra as the structural dimensionality decreases, leading to lowered energy levels of STE and a corresponding red shift. The tunable STE emission makes these metal halides promising for anticounterfeiting and white LED applications. These findings provide a new strategy for tuning STE emission in lead-free metal halides.
具有可调结构的无铅金属卤化物已成为一类新型的光电子材料。金属卤化物多面体的排列决定了它们的结构维度,并作为影响其光学性质的关键因素。为了对此进行研究,我们合成了四种不同的锑(Sb)掺杂铟(In)基金属卤化物,它们均具有零维(0D)电子结构,但在分子水平上呈现出三维(3D)、二维(2D)、一维(1D)和零维(0D)的结构维度。随着结构维度的降低,它们的自陷激子(STE)发射呈现出红移,峰值位置从496纳米移至663纳米。我们发现,这种红移是由于随着结构维度降低,[SbCl]八面体的畸变增加所致,这导致STE的能级降低并相应地发生红移。可调的STE发射使得这些金属卤化物在防伪和白光发光二极管应用方面具有潜力。这些发现为调节无铅金属卤化物中的STE发射提供了一种新策略。