Guan Xiang, Li Yuqing, Meng Yuanyuan, Wang Kongxiang, Lin Kebin, Luo Yujie, Wang Jing, Duan Zhongtao, Liu Hong, Yang Liu, Zheng Lingfang, Lin Junpeng, Weng Yalian, Xie Fengxian, Lu Jianxun, Wei Zhanhua
Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China.
Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China.
Nat Commun. 2024 Nov 15;15(1):9913. doi: 10.1038/s41467-024-54160-x.
Eco-friendly Sn-based perovskites show significant potential for high-performance second near-infrared window light-emitting diodes (900 nm - 1700 nm). Nevertheless, achieving efficient and stable Sn-based perovskite second near-infrared window light-emitting diodes remains challenging due to the propensity of Sn to oxidize, resulting in detrimental Sn-induced defects and compromised device performance. Here, we present a targeted strategy to eliminate Sn-induced defects through moisture-triggered hydrolysis of tin tetrahalide, without degrading Sn in the CsSnI film. During the moisture treatment, tin tetrahalide is selectively hydrolyzed to Sn(OH), which provides sustained protection. As a result, we successfully fabricate second near-infrared window light-emitting diodes emitting at 945 nm, achieving a performance breakthrough with an external quantum efficiency of 7.6% and an operational lifetime reaching 82.6 h.
环保型锡基钙钛矿在高性能第二近红外窗口发光二极管（900纳米至1700纳米）方面显示出巨大潜力。然而，由于锡易于氧化，会导致有害的锡诱导缺陷并损害器件性能，因此实现高效且稳定的锡基钙钛矿第二近红外窗口发光二极管仍然具有挑战性。在此，我们提出一种有针对性的策略，通过四卤化锡的湿气触发水解来消除锡诱导的缺陷，同时不会使CsSnI薄膜中的锡降解。在湿气处理过程中，四卤化锡被选择性地水解为Sn(OH)，从而提供持续的保护。结果，我们成功制造出在945纳米处发光的第二近红外窗口发光二极管，实现了性能突破，外部量子效率达到7.6%，工作寿命达到82.6小时。
