Plasmonic modulators based on enhanced interaction between graphene and localized transverse-electric plasmonic mode.

Active plasmonic modulators with high modulation depth, low energy consumption, ultra-fast speed, and small footprint are of interest and particular significance for nanophotonics and integrated optics. Here by constructing a transverse-electric (TE) plasmonic mode and maximizing the in-plane component localized on the graphene surface, we propose a high-performing plasmonic modulator based on a graphene/split ring-like plasmonic waveguide (SRPW) system with a record high modulation depth (20.46 dB/µm) and suppressed insertion loss (0.248 dB/µm) at telecom wavelength 1310 nm, simultaneously possessing pronounced advantage in broadband ability (800-1650 nm) and superior electrical performance with energy consumption of 0.43 fJ/bit and modulation speed of 200 GHz. This innovative design provides a novel approach and idea for enhancing the interaction between light and matter in the waveguide system and will certainly inspire new schemes for the development of on-chip integrated optoelectronic devices.