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Uniform slow conduction during sinus rhythm and low voltage/low voltage gradient ΔV/V characterize the VT isthmus location.

作者信息

Ciaccio Edward J, Hsia Henry H, Robinson David, Cedilnik Nicolas, Zeldin Lawrence, Wan Elaine Y, Biviano Angelo B, Yarmohammadi Hirad, Saluja Deepak S

机构信息

Department of Medicine, Division of Cardiology, Columbia University College of Physicians and Surgeons, New York, New York.

Cardiac Electrophysiology and Arrhythmia Service, University of California San Francisco, San Francisco, California.

出版信息

Heart Rhythm. 2025 Oct;22(10):2486-2496. doi: 10.1016/j.hrthm.2024.11.051. Epub 2024 Nov 28.

DOI:10.1016/j.hrthm.2024.11.051
PMID:39615817
Abstract

BACKGROUND

Reentrant ventricular tachycardia (VT) properties require further elucidation.

OBJECTIVE

To understand circuit mechanisms and improve ablation targeting.

METHODS

In postinfarction VT patients undergoing electrophysiology study and catheter ablation, high-density endocardial electrogram contact mapping data was acquired during sinus rhythm (n = 6) and during VT (n = 12) and annotated by the system. Bipolar endocardial VT voltage was used to compute the voltage gradient, ΔV/V, at isthmus midline and at the lateral boundaries. Voltage was additionally represented as a depth as well as a color change, to better visualize level. Linear regression analysis was implemented to quantitate the sinus rhythm activation gradient along the isthmus long-axis midline, and along 3 other spokes originating from a last activation point.

RESULTS

The mean voltage along the isthmus long-axis was 0.234 ± 0.137 mV, vs 0.383 ± 0.290 mV aside boundaries (P < .001). The gradient ΔV/V along the isthmus long-axis was 0.425 ± 0.324, vs 0.823 ± 0.550 at boundaries (P < .001). Sinus rhythm activation was uniform (mean r = 0.93 ± 0.05) and slow (∇ = 0.16 ± 0.03 mm/msec) along the spoke coinciding with isthmus long-axis midline, vs less uniform (mean r = 0.32 ± 0.25) and rapid (∇ = 0.73 ± 0.62 mm/msec) along the other spokes (P < .001 and P = .003, respectively). Plotting r vs ∇, parameters of isthmus vs nonisthmus spokes were clearly separable.

CONCLUSION

A low-voltage trench coincides with the VT isthmus, vs abrupt voltage increase at the lateral boundaries, which may contravene prior definitions of conducting channels. Sinus rhythm uniform slow conduction occurs at the VT isthmus location, preventing circuit disruption while enabling the formation of an excitable gap to perpetuate reentry.

摘要

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