Wang Peng, Wang Dong, Guo Xing, Yao Qingkai, Chen Chengmin, Qi Yue, Sun Li, Zhang Xue, Yu Fapeng, Zhao Xian, Xie Xuejian
State Key Lab of Crystal Materials, Institute of Novel Semiconductors and Center for Optics Research and Engineering, Shandong University, Jinan 250100, P.R. China.
Energy Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250100, P.R. China.
ACS Appl Mater Interfaces. 2024 Dec 11;16(49):68680-68692. doi: 10.1021/acsami.4c16003. Epub 2024 Dec 3.
Developing high-quality monocrystalline graphene has been an area of compelling research focus in the field of two-dimensional materials. Overcoming growth cessation presents a significant challenge in advancing the production of monocrystalline graphene. Herein, methods for sustaining a steady and consistent growth driving force are investigated based on the single-crystal growth theory. Comparative analysis revealed that each dynamic regulation method significantly increased the size of graphene compared to samples grown under stable pressure conditions. The grain size of high-quality graphene was significantly increased from ∼400 μm to ∼3 mm. Moreover, experimental measurements and numerical simulations were employed to investigate the impact of ambient pressure on the temperature and flow field. By considering the influence of pressure on the boundary layer and reaction rate constant, the mechanism underlying the dynamic regulation of ambient pressure was elucidated. Ultimately, the crystal growth kinetics theory, initially formulated with considerations of undercooling Δ and supersaturation , was developed by inducing the individual parameter of ambient pressure . Due to diameter expansion and mechanical property promotion, a bilayer graphene Fabry-Perot interference (1100 μm) sensor with a stable signal response (52 dB) and superior minimum detection pressure at 20 kHz (87 μPa/Hz) was prepared. This innovative approach to regulating ambient pressure during crystal growth enables monocrystalline graphene to possess superior structure and properties for future technologies and provides insights into the production of other two-dimensional materials.
开发高质量的单晶石墨烯一直是二维材料领域引人注目的研究重点。克服生长停滞是推进单晶石墨烯生产的一项重大挑战。在此,基于单晶生长理论研究了维持稳定且一致的生长驱动力的方法。对比分析表明,与在稳定压力条件下生长的样品相比,每种动态调节方法都显著增加了石墨烯的尺寸。高质量石墨烯的晶粒尺寸从约400μm显著增加到约3mm。此外,采用实验测量和数值模拟来研究环境压力对温度和流场的影响。通过考虑压力对边界层和反应速率常数的影响,阐明了环境压力动态调节的机制。最终,通过引入环境压力的单独参数,发展了最初考虑过冷度Δ和过饱和度而制定的晶体生长动力学理论。由于直径扩大和机械性能提升,制备了一种具有稳定信号响应(52dB)和在20kHz时优异的最小检测压力(87μPa/Hz)的双层石墨烯法布里-珀罗干涉(1100μm)传感器。这种在晶体生长过程中调节环境压力的创新方法使单晶石墨烯具有卓越的结构和性能,适用于未来技术,并为其他二维材料的生产提供了见解。