Nguyen Phong H, Callan Devon, Plunkett Evan, Gruschka Max, Alizadeh Nima, Landsman Matthew R, Su Gregory M, Gann Eliot, Bates Christopher M, DeLongchamp Dean M, Chabinyc Michael L
Department of Chemical Engineering, University of California at Santa Barbara, Santa Barbara, California 93117, United States.
Materials Department, University of California at Santa Barbara, Santa Barbara, California 93117, United States.
J Phys Chem B. 2024 Dec 19;128(50):12597-12611. doi: 10.1021/acs.jpcb.4c05774. Epub 2024 Dec 5.
The distribution of counterions and dopants within electrically doped semicrystalline conjugated polymers, such as poly(3-hexylthiophene-2,5-diyl) (P3HT), plays a pivotal role in charge transport. The distribution of counterions in doped films of P3HT with controlled crystallinity was examined using polarized resonant soft X-ray scattering (P-RSoXS). The changes in scattering of doped P3HT films containing trifluoromethanesulfonimide (TFSI) and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (FTCNQ) as counterions to the charge carriers revealed distinct differences in their nanostructure. The scattering anisotropy of P-RSoXS from doped blends of P3HT was examined as a function of the soft X-ray absorption edge and found to vary systematically with the composition of crystalline and amorphous domains and by the identity of the counterion. A computational methodology was developed and used to simulate the soft X-ray scattering as a function of morphology and molecular orientation of the counterions. Modeling of the P-RSoXS at N and F K-edges was consistent with a structure where the conjugated plane of FTCNQ aligns perpendicularly to that of the P3HT backbone in ordered domains. In contrast, TFSI was distributed more uniformly between domains with no significant molecular alignment. The approach developed here demonstrates the capabilities of P-RSoXS in identifying orientation, structural, and compositional distributions within doped conjugated polymers using a computational workflow that is broadly extendable to other soft matter systems.
在诸如聚(3-己基噻吩-2,5-二亚基)(P3HT)等电掺杂半结晶共轭聚合物中,抗衡离子和掺杂剂的分布在电荷传输中起着关键作用。使用偏振共振软X射线散射(P-RSoXS)研究了具有可控结晶度的P3HT掺杂薄膜中抗衡离子的分布。含有三氟甲磺酰亚胺(TFSI)和2,3,5,6-四氟-7,7,8,8-四氰基对苯二醌二甲烷(FTCNQ)作为电荷载流子抗衡离子的P3HT掺杂薄膜的散射变化揭示了它们纳米结构的明显差异。研究了P3HT掺杂共混物的P-RSoXS散射各向异性作为软X射线吸收边的函数,发现其随结晶和非晶域的组成以及抗衡离子的种类而系统地变化。开发了一种计算方法并用于模拟作为抗衡离子形态和分子取向函数的软X射线散射。在N和F K边对P-RSoXS进行建模与一种结构一致,在有序域中FTCNQ的共轭平面与P3HT主链的共轭平面垂直排列。相比之下,TFSI在各域之间分布更均匀,没有明显的分子排列。这里开发的方法展示了P-RSoXS通过一种可广泛扩展到其他软物质系统的计算工作流程来识别掺杂共轭聚合物中的取向、结构和组成分布的能力。