拓扑双带开放量子系统中记忆效应的量化

Quantification of memory effects in topological two-band open quantum systems.

作者信息

Triviño H, Mesa F, Ballesteros V A

机构信息

Universidad de Antioquia, Facultad de Ciencias Exactas y Naturales, Grupo de Investigación en Física Teórica y Matemáticas Aplicadas, Calle 70 No. 52-21, Medellín, 050010, Antioquia, Colombia.

Fundación Universitaria Los Libertadores, Facultad de Ingeniería y Ciencias Básicas, NanoTech Group, Cra.16 No. 63a-68, Bogotá, 111221, Cundinamarca, Colombia.

出版信息

Heliyon. 2024 Nov 20;10(22):e40552. doi: 10.1016/j.heliyon.2024.e40552. eCollection 2024 Nov 30.

DOI:10.1016/j.heliyon.2024.e40552

PMID:39650179

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11625132/

Abstract

We incorporate non-Markovian profiles and Linear Response Theory to analyze memory effects in two-band topological quantum systems. Furthermore, we have applied a measure of non-Markovianity in terms of nonlinear optical spectroscopy. On the other hand, we resort to memory kernel, solve the integro-differential equation of the open two-band topological quantum system to describe the degrees of non-Markovianity, calculate response factors based on Linear Response Theory, and analyze non-Markovian dynamics by varying the parameters of the nonlinear spectroscopy environment of the respective open quantum system.

摘要

我们结合非马尔可夫过程和线性响应理论来分析两能带拓扑量子系统中的记忆效应。此外，我们应用了基于非线性光学光谱的非马尔可夫性度量。另一方面，我们借助记忆核，求解开放两能带拓扑量子系统的积分 - 微分方程以描述非马尔可夫性程度，基于线性响应理论计算响应因子，并通过改变各个开放量子系统的非线性光谱环境参数来分析非马尔可夫动力学。