Alam Noohul, Rahaman Towhidur, Das Anish Kumar, Pal Arun K, Datta Ayan, Ray Soumya Jyoti, Mondal Pradip Kumar, Polentarutti Maurizio, Mandal Sukhendu
School of Chemistry, Indian Institute of Science Education and Research Thiruvananthapuram, Kerala, 695551, India.
Department of Physics, Indian Institute of Technology Patna, Bihar, 801106, India.
Small. 2024 Dec 10:e2409118. doi: 10.1002/smll.202409118.
Bottom-up design of electronic materials based on nanometer-sized building blocks requires precise control over their self-assembly process. Atomically precise metal nanoclusters (NCs) are the well-characterized building blocks for crafting tunable nanomaterials. Here, a solution-processed assembly of a newly synthesized molecular silver nanocluster (0 D Ag-NC) into a 1D nanocluster chain (1 D Ag-CAM) is mediated by 4,4'-bipyridine linker Both 0 D Ag-NC and 1 D Ag-CAM consist of Ag core that adopts the cuboctahedron geometry protected by organic ligands. The resistive switching devices are fabricated in a sandwich-like structure of ITO (Indium tin oxide)/X/Ag (where X is either 0 D Ag-NC or 1 D Ag-CAM). The device based on 1 D Ag-CAM exhibited excellent resistive switching behaviour, enduring up to 1000 cycles and boasting a fivefold higher I/I ratio compared to the device based on the molecular 0 D Ag-NC nanocluster. Furthermore, the device based on 1 D Ag-CAM demonstrated negative differential resistance (NDR) phenomena, achieving a peak-to-valley ratio of 2.34 with a switching efficiency of 23 Ns. This work highlights the importance of interconnecting molecular nanoclusters into 1D nanocluster chains for fine-tuning resistive memory properties in futuristic electronic appliances.
基于纳米尺寸构建单元的电子材料自下而上设计需要对其自组装过程进行精确控制。原子精确的金属纳米团簇（NCs）是用于制备可调谐纳米材料的特征明确的构建单元。在此，通过4,4'-联吡啶连接体介导新合成的分子银纳米团簇（0D Ag-NC）溶液处理组装成一维纳米团簇链（1D Ag-CAM）。0D Ag-NC和1D Ag-CAM均由采用由有机配体保护的立方八面体几何形状的Ag核组成。电阻开关器件以ITO（氧化铟锡）/X/Ag的三明治状结构制造（其中X为0D Ag-NC或1D Ag-CAM）。基于1D Ag-CAM的器件表现出优异的电阻开关行为，可承受高达1000次循环，并且与基于分子0D Ag-NC纳米团簇的器件相比，其I/I比高出五倍。此外，基于1D Ag-CAM的器件表现出负微分电阻（NDR）现象，峰谷比达到2.34，开关效率为23纳秒。这项工作突出了将分子纳米团簇互连为一维纳米团簇链对于微调未来电子设备中的电阻记忆特性的重要性。
