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SiO₂ 中封装的 CdTe-Ag 量子点复合材料的增益饱和

Gain Saturation of Encapsulated CdTe-Ag Quantum Dot Composite in SiO.

作者信息

Kim Minwoo, Antony Agna, Kim Inhong, Kim Minju, Kyhm Kwangseuk

机构信息

Department of Optics & Cogno-Mechatronics Engineering, Pusan National University, Busan 46241, Republic of Korea.

出版信息

Nanomaterials (Basel). 2024 Dec 4;14(23):1950. doi: 10.3390/nano14231950.

Abstract

Amplified spontaneous emission of CdTe and CdTe-Ag quantum dot composites were compared for increasing the optical stripe length, whereby optical gain coefficients for various emission wavelengths were obtained. In the case of CdTe-Ag nanoparticle composites, we observed that plasmonic coupling causes both optical enhancement and quenching at different wavelengths, where the amplified spontaneous emission intensity becomes enhanced at short wavelengths but suppressed at long wavelengths (>600 nm). To analyze the logistic stripe length dependence of amplified spontaneous emission intensity, we used a differential method to obtain the gain coefficient beyond the amplification range. This analysis enabled us to find the limit of the commonly used fitting method in terms of a threshold length and a saturation length, where amplification begins and saturation ends, respectively.

摘要

比较了CdTe和CdTe-Ag量子点复合材料的放大自发辐射,以增加光学条纹长度,从而获得了不同发射波长的光学增益系数。在CdTe-Ag纳米颗粒复合材料的情况下,我们观察到等离子体耦合在不同波长处引起光学增强和猝灭,其中放大自发辐射强度在短波长处增强,但在长波长(>600nm)处受到抑制。为了分析放大自发辐射强度对逻辑条纹长度的依赖性,我们使用微分方法获得超出放大范围的增益系数。该分析使我们能够找到常用拟合方法在阈值长度和饱和长度方面的极限,其中放大分别开始和饱和结束。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/150e/11643136/a30dbfba9e7c/nanomaterials-14-01950-g001.jpg

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