Simultaneously Achieved High Piezoelectricity and High Resistivity in NaBiTiO-Based Ceramics with High Curie Temperature.

Good piezoelectricity and high resistivity are prerequisites for high-temperature acceleration sensors to function correctly in high-temperature environments. Bismuth layered structure ferroelectrics (BLSFs) are promising candidates for piezoelectric ceramics with excellent piezoelectric performance at high temperatures, high electrical resistivity, and high Curie temperatures (). In this study, (LiMn) is substituted for Bi at the A-site, and Ce-doping is performed to replace Ti ions in NaBiTiO, which achieves the desired combination of high piezoelectric coefficients and high resistivity. Herein, we prepared NaBi(LiMn)TiCeO high-temperature piezoelectric ceramics, achieving a high piezoelectric coefficient of 32.0 pC/N and a high resistivity ρ of 1.2 × 10 Ω·cm (at 500 °C), and a high Curie temperature of 648 °C. It is important that the variation remains within 8% over a wide temperature range from 25 °C to 600 °C, demonstrating excellent thermal stability. Structural characterization and microstructure analysis showed that the excellent piezoelectric coefficient and high resistivity of cerium-doped NaBiTiO-based ceramics are attributable to the synergistic effects of structural characteristics, defect concentration, refined grain size and domain morphology. This study demonstrates that the superior properties of NaBi(LiMn)TiCeO ceramics are crucial for the stable operation of high-temperature accelerometer sensors and for the development of high-temperature devices.